参数资料
型号: NCP5360RMNR2G
厂商: ON Semiconductor
文件页数: 5/7页
文件大小: 0K
描述: IC DRIVER MOSFET 56QFN
标准包装: 2,500
类型: 高端/低端驱动器
输入类型: PWM
输出数: 1
电流 - 输出 / 通道: 40A
电源电压: 4.5 V ~ 25 V
工作温度: -10°C ~ 100°C
安装类型: 表面贴装
封装/外壳: 56-VFQFN 裸露焊盘
供应商设备封装: 56-QFN(8x8)
包装: 带卷 (TR)
NCP5360R
ELECTRICAL CHARACTERISTICS (Notes 3, 4) (VCIN = 12 V, VIN = 12 V, T A = ? 10 ° C to +100 ° C, unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
SUPPLY CURRENT
VCIN Current (Normal Mode)
?
DISB# = 5 V, PWM = OSC, Fsw = 400 kHz
75
mA
VCIN Current (Shutdown Mode)
?
DISB# = GND
0.5
1.7
mA
UNDERVOLTAGE LOCKOUT
UVLO Startup
UVLO Hysteresis
?
?
3.8
150
4.35
200
4.5
250
V
mV
BOOTSTRAP DIODE
Bootstrap Diode Forward Voltage
?
VCIN = 12 V, Forward Bias Current = 2 mA
0.1
0.4
0.6
V
PWM INPUT
PWM Input Voltage High
V PWM_HI
3.3
V
PWM Input Voltage Mid ? State
PWM Input Voltage Low
Tri ? State Shutdown Holdoff Time
V PWM_MID
V PWM_LO
?
1.3
200
2.7
0.7
V
V
ns
OUTPUT DISABLE
Output Disable Input Voltage High
Output Disable Input Voltage Low
Output Disable Hysteresis
V DISB_HI
V DISB_LO
?
2.0
500
1.0
V
V
mV
Output Disable Propagation Delay
20
40
ns
3. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T J = T A = 25 _ C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
PWM
GH ? VSWH
GL
Figure 4. Timing Diagram
http://onsemi.com
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