参数资料
型号: NCP5425DBR2G
厂商: ON Semiconductor
文件页数: 3/22页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM VM 20TSSOP
标准包装: 1
PWM 型: 电压模式
输出数: 2
频率 - 最大: 938kHz
占空比: 100%
电源电压: 4.75 V ~ 13.2 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: 0°C ~ 125°C
封装/外壳: 20-TSSOP(0.173",4.40mm 宽)
包装: 剪切带 (CT)
其它名称: NCP5425DBR2GOSCT
NCP5425
MAXIMUM RATINGS
Operating Junction Temperature, T J
Storage Temperature Range, T J
ESD Susceptibility (Human Body Model)
ESD Susceptibility (Machine Model)
Thermal Resistance, Junction?to?Air
Moisture Sensitivity Level (MSL)
Lead Temperature Soldering: Reflow: (Note 1)
Rating
Value
150
?65 to 150
2.0
200
140
1
260 peak
Unit
° C
° C
kV
V
° C/W
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 60 to 150 seconds maximum above 183 ° C, 260 ° C peak.
MAXIMUM RATINGS
Pin Symbol
V CC
Pin Name
IC Power Input
V MAX
16 V
V MIN
?0.3 V
I SOURCE
N/A
I SINK
2.0 A Peak
200 mA DC
COMP1, COMP2
Compensation Capacitor for
4.0 V
?0.3 V
1.0 mA
1.0 mA
Channel 1 or 2
V FB1 , V FB2 , V REF2
Voltage Feedback Input for
6.0 V
?0.3 V
1.0 mA
1.0 mA
Channel 1 or 2
R OSC
GATE(H)1 , GATE(H)2
Oscillator Resistor
High?Side FET Driver
5.0 V
20 V
?0.3 V
?0.3 V
1.0 mA
2.0 A Peak
1.0 mA
2.0 A Peak
for Channel 1 or 2
200 mA DC
200 mA DC
GATE(L)1 , GATE(L)2
Low?Side FET Driver for
16 V
?0.3 V
2.0 A Peak
2.0 A Peak
Channel 1 or 2
200 mA DC
200 mA DC
IS+1, IS+2
Positive Current Sense for
6.0 V
?0.3 V
1.0 mA
1.0 mA
Channel 1 or 2
IS?1, IS?2
Negative Current Sense for
6.0 V
?0.3 V
1.0 mA
1.0 mA
Channel 1 or 2
GND
Ground
100 mV
0V
2.0 A Peak
N/A
200 mA DC
BST
Power Input for GATE(H)1
23 V
?0.3 V
N/A
2.0 A Peak
GATE(H)2
200 mA DC
MODE
Dual or Single Output Select
3.5 V
?0.3 V
N/A
N/A
http://onsemi.com
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