参数资料
型号: NCP623MN-40R2G
厂商: ON Semiconductor
文件页数: 8/16页
文件大小: 0K
描述: IC REG LDO 4V .15A 6-DFN
标准包装: 1
稳压器拓扑结构: 正,固定式
输出电压: 4V
输入电压: 最高 12V
电压 - 压降(标准): 0.18V @ 150mA
稳压器数量: 1
电流 - 输出: 150mA
电流 - 限制(最小): 175mA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 6-VDFN 裸露焊盘
供应商设备封装: 6-DFN(3x3)
包装: 剪切带 (CT)
其它名称: NCP623MN-40R2GOSCT
NCP623
NCP623 Without
Wake ? up Improvement
(Typical Response)
1 ms
NCP623 With
Wake ? up Improvement
(Typical Response)
30 m s
Figure 6. NCP623 Wake ? up Improvement with Small PNP Transistor
The PNP connected to the bypass pin does not degrade the
noise response of the NCP623. Figure 7 displays the noise
350
density using the setup in Figure 5. The typical noise level
is 26 m V RM (100 Hz to 25 kHz) at I OUT = 60 mA.
300
250
200
150
100
C byp = 10 nF
V in = 3.8 V
V out = 2.8 V
C o = 1.0 m F
I out = 60 mA
T amb = 25 ° C
50
0
Output Noise = 26 m Vrms
C = 10 nF @ 100 Hz ? 100 kHz
100 1,000 10,000
100,000
1,000,000
Frequency (Hz)
Figure 7. Noise Density of the NCP623 with a 10 nF
Bypass Capacitor and a Wake ? up Improvement Network
http://onsemi.com
8
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