参数资料
型号: NCP694HSAN33T1G
厂商: ON Semiconductor
文件页数: 4/17页
文件大小: 0K
描述: IC REG LDO 3.3V 1A 6HSON
标准包装: 1
稳压器拓扑结构: 正,固定式
输出电压: 3.3V
输入电压: 最高 6V
电压 - 压降(标准): 0.18V @ 1A
稳压器数量: 1
电流 - 输出: 1A
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 6-SMD,扁平引线裸焊盘
供应商设备封装: 6-HSON
包装: 标准包装
其它名称: NCP694HSAN33T1GOSDKR
NCP694
ELECTRICAL CHARACTERISTICS FOR FIX VERSION (V in = V out(nom.) + 1.0 V, V CE = V in , C in = 4.7 m F, C out = 4.7 m F, T A =
25 ° C, unless otherwise noted)
Characteristic
Output Voltage (T A = 25 ° C, I out = 100 mA, V in ? V out = 1 V)
0.8 V
1.0 V
1.2 V
2.5 V
3.3 V
Output Current (V in ? V out = 1 V)
Input voltage
Line Regulation (I out = 100 mA)
Load Regulation (I out = 1 mA to 300 mA, V in = V out + 2.0 V)
Load Regulation (I out = 1 mA to 1 A, V in = V out + 2.0 V)
Supply Current (I out = 0 A, (V in ? V out ) = 1 V, V CE = V in )
Standby Current (V CE = 0V, V in = 6.0 V)
Short Current Limit (V out = 0 V)
Output Voltage Temperature Coefficient
Enable Input Threshold Voltage
(Voltage Increasing, Output Turns On, Logic High)
(Voltage Decreasing, Output Turns Off, Logic Low)
Enable Pull ? down Current
Drop Output Voltage (T A = 25 ° C, I out = 300 mA)
0.8 V Output voltage V out (V)
1.0 V
1.2 V
2.5 V
3.3 V
Drop Output Voltage (T A = 25 ° C, I out = 1A)
0.8 V Output voltage V out (V)
1.0 V
1.2 V
2.5 V
3.3 V
Ripple Rejection (Ripple 200 mV pp , I out =100 mA, f = 1 kHz)
Output Noise (BW = 10 Hz to 100 kHz, I out = 1 mA)
Thermal Shutdown Temperature/Hysteresis
R DS(on) of additional output transistor (D version only)
Symbol
V out
I out
V in
Reg line
Reg load03
Reg load1
I ss
I stby
I sh
T c
V thCE
V in ? V out
V in ? V out
PSRR
V noise
T shd /Hyst
R DS(on)
Min
0.770
0.970
1.170
2.450
3.234
1.4
?
? 15
?
?
1.0
0
Typ
0.8
1.0
1.2
2.5
3.3
1
0.05
? 2
? 3
60
0.1
250
$ 100
?
?
100
0.33
0.22
0.18
0.10
0.05
0.72
0.64
0.56
0.32
0.18
70
30
150/30
30
Max
0.830
1.030
1.030
2.550
3.366
6.0
0.2
15
?
100
1.0
?
6
0.4
220
0.570
0.470
0.320
0.150
0.100
Unit
V
A
V
%/V
mV
mV
m A
m A
mA
ppm/ ° C
V
nA
V
V
dB
m V rms
° C
W
2. Maximum package power dissipation limits must be observed.
3. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
http://onsemi.com
4
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