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| 型号： | NCP81081MNR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER/MOSFET 40-QFN |
| 标准包装： | 2,500 |
| 类型： | 高端/低端驱动器 |
| 输入类型： | PWM |
| 输出数： | 1 |
| 电流 - 输出 / 通道： | 35A |
| 电源电压： | 4.5 V ~ 25 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 40-VFQFN 裸露焊盘 |
| 供应商设备封装： | 40-QFN（6x6） |
| 包装： | 带卷 (TR) |
NCP81081
ELECTRICAL CHARACTERISTICS (Note 1) (VCIN = 5 V, VIN = 12 V, T A = ? 10 ° C to +100 ° C, unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
SUPPLY CURRENT
VCIN Current (normal mode)
VCIN Current (shutdown mode)
?
?
DISB# = 5 V, PWM = OSC,
FSW = 400 kHz
DISB# = GND
14
15
20
30
mA
m A
UNDERVOLTAGE LOCKOUT
UVLO Startup
UVLO Hysteresis
?
?
3.8
150
4.35
200
4.5
250
V
mV
BOOTSTRAP DIODE
Forward Voltage
?
VCIN = 5 V, forward bias current = 2 mA
0.1
0.4
0.6
V
PWM INPUT
PWM Input Voltage High
PWM Input Voltage Mid ? State
PWM Input Voltage Low
Tri ? State Shutdown Holdoff Time
V PWM_HI
V PWM_MID
V PWM_LO
t holdoff
2.65
1.4
?
?
?
?
250
?
2.0
0.7
V
V
V
ns
PWM Input Resistance
PWM Input Bias Voltage
OUTPUT DISABLE
63
1.7
k W
V
Output Disable Input Voltage High
Output Disable Input Voltage Low
Output Disable Hysteresis
Output Disable Propagation Delay
V DISB#_HI
V DISB#_LO
?
2.0
?
?
?
?
?
500
20
?
0.8
?
40
V
V
mV
ns
ZERO CROSS DETECT
Zero Cross Detect High
Zero Cross Detect Low
V ZCD_EN#_HI
V ZCD_EN#_LO
2.0
?
?
?
?
0.8
V
V
Zero Cross Detect Threshold
ZCD Blanking Timer
THERMAL WARNING/SHUTDOWN
Thermal Warning Temperature
Thermal Warning Hysteresis
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
? 6
250
150
15
180
25
mV
ns
° C
° C
° C
° C
1. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T J = T A = 25 ° C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
http://onsemi.com
4
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