参数资料
| 型号： | NCS2566DTBR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/13页 |
| 文件大小： | 0K |
| 描述： | IC AMP VIDEO 3CH SELECT 20-TSSOP |
| 标准包装： | 2,500 |
| 应用： | 重构滤波器 |
| 电路数： | 6 |
| -3db带宽： | 8MHz |
| 电流 - 电源： | 65mA |
| 电流 - 输出 / 通道： | 40mA |
| 电压 - 电源，单路/双路(±)： | 4.7 V ~ 5.3 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 20-TSSOP |
| 包装： | 带卷 (TR) |
NCS2566
http://onsemi.com
4
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltages
VCC
0.3 v VCC v 5.5
Vdc
Input Voltage Range
VI
0.3 v VI v VCC
Vdc
Input Differential Voltage Range
VID
0.3 v VI v VCC
Vdc
Output Current Per Channel
IO
50
mA
Maximum Junction Temperature (Note 1)
TJ
150
°C
Operating Ambient Temperature
TA
40 to +85
°C
Storage Temperature Range
Tstg
60 to +150
°C
Power Dissipation
PD
(See Graph)
mW
Thermal Resistance, JunctiontoAir
RqJA
125
°C/W
ESD Protection Voltage (IEC6100042)
Vesd
>8000
V
ESD HBM Human Body Model
HBM
4000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated is
limited by the associated rise in junction temperature. For
the plastic packages, the maximum safe junction
temperature is 150
°C. If the maximum is exceeded
momentarily, proper circuit operation will be restored as
soon as the die temperature is reduced. Leaving the device
in the “overheated” condition for an extended period can
result in device burnout. To ensure proper operation, it is
important to observe the derating curves.
Figure 2. Power Dissipation vs Temperature
0
200
400
600
800
1000
1200
1400
0 10 20304050 607080 90100
TEMPERATURE (°C)
POWER
DISSIP
ATION
(mV)
1800
1600
40 302010
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