参数资料
型号: NCV1009DR2G
厂商: ON Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: IC VREF SHUNT PREC 2.5V 8-SOICN
标准包装: 1
基准类型: 旁路,精度
输出电压: 2.5V
容差: ±0.2%
温度系数: 标准值 15ppm/°C
通道数: 1
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 剪切带 (CT)
其它名称: NCV1009DR2GOSCT
NCV1009
MAXIMUM RATINGS*
Reverse Current
Forward
Package Thermal Resistance, SOIC?8:
Junction?to?Case, R q JC
Junction?to?Ambient, R q JA
Package Thermal Resistance, TO?92:
Junction?to?Case, R q JC
Junction?to?Ambient, R q JA
Operating Temperature Range
Storage Temperature Range
Rating
Value
20
10
45
165
?
170
?40 to +125
?65 to +150
Unit
mA
mA
° C/W
° C/W
° C/W
° C/W
° C
° C
Lead Temperature Soldering:
Wave Solder (through hole styles only) (Note 1)
Reflow: (SMD styles only) (Notes 2, 3)
260 peak
240 peak
° C
° C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
*The maximum package power dissipation must be observed.
1. 10 second maximum
2. 60 second maximum above 183 ° C.
3. ?5 ° C / +0 ° C allowable conditions.
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage
Reverse Breakdown Voltage
Reverse Breakdown Voltage
Change with Current
Test Conditions
I R = 1.0 mA
?40 ° C ≤ T A ≤ 125 ° C
400 m A ≤ I R ≤ 10 mA
(Note 4)
Min
2.492
2.480
?
?
Typ
2.500
2.500
2.6
3.0
Max
2.508
2.508
5.0
6.0
Unit
V
V
mV
mV
Reverse Dynamic Impedance
Temperature Stability
Average Temperature Coefficient
Long Term Stabilty
I R = 1.0 mA
0 ° C ≤ T A ≤ 70 ° C, (Note 5)
0 ° C ≤ T A ≤ 70 ° C, (Note 5)
T A = 25 ° C ± 0.1 C, I R = 1.0 mA
(Note 4)
?
?
?
?
?
0.2
0.4
1.8
15
20
1.0
1.4
?
?
?
W
W
mV
ppm/ ° C
ppm/kHr
4. Denotes the specifications which apply over full operating temperature range.
5. Average temperature coefficient is defined as the total voltage change divided by the specified temperature range.
http://onsemi.com
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