参数资料
型号: NCV1413BDR2G
厂商: ON Semiconductor
文件页数: 2/8页
文件大小: 0K
描述: IC TRANS DARL ARRAY HV 16SOIC
标准包装: 1
类型: 达林顿晶体管矩阵
驱动器/接收器数: 7/0
电源电压: 50V
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC
包装: 标准包装
其它名称: NCV1413BDR2GOSDKR
MC1413, MC1413B, NCV1413B
http://onsemi.com
2
MAXIMUM RATINGS (TA = 25°C, and rating apply to any one device in the package, unless otherwise noted.)
Rating
Symbol
Value
Unit
Output Voltage
VO
50
V
Input Voltage
VI
30
V
Collector Current Continuous
IC
500
mA
Base Current Continuous
IB
25
mA
Operating Ambient Temperature Range
MC1413
MC1413B
NCV1413B
TA
20 to +85
40 to +85
40 to +125
°C
Storage Temperature Range
Tstg
55 to +150
°C
Junction Temperature
TJ
150
°C
Thermal Resistance, JunctiontoAmbient
Case 648, P Suffix
Case 751B, D Suffix
RqJA
67
100
°C/W
Thermal Resistance, JunctiontoCase
Case 648, P Suffix
Case 751B, D Suffix
RqJC
22
20
°C/W
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
ESD
2000
400
1500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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