参数资料
| 型号： | NCV33072DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 20/26页 |
| 文件大小： | 0K |
| 描述： | IC OP AMP MONOLITHIC 8SOIC |
| 标准包装： | 2,500 |
| 放大器类型： | 通用 |
| 电路数： | 2 |
| 转换速率： | 13 V/µs |
| 增益带宽积： | 4.5MHz |
| 电流 - 输入偏压： | 100nA |
| 电压 - 输入偏移： | 1000µV |
| 电流 - 电源： | 1.9mA |
| 电压 - 电源，单路/双路(±)： | 3 V ~ 44 V，±1.5 V ~ 22 V |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
MC34071,2,4,A MC33071,2,4,A, NCV33072,4,A
http://onsemi.com
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage (from VEE to VCC)
VS
+44
V
Input Differential Voltage Range
VIDR
(Note 1)
V
Input Voltage Range
VIR
(Note 1)
V
Output Short Circuit Duration (Note 2)
tSC
Indefinite
Sec
Operating Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
60 to +150
°C
ESD Capability, Dual and Quad (Note 3)
Human Body Model
Machine Model
ESDHBM
ESDMM
2000
200
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Either or both input voltages should not exceed the magnitude of VCC or VEE.
2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded (see Figure 2).
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AECQ100002 (JEDEC standard: JESD22A114)
ESD Machine Model tested per AECQ100003 (JEDEC standard: JESD22A115)
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| NCV33074A | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Single Supply 3.0 V to 44 V Operational Amplifiers |
| NCV33074ADR2G | 制造商:ON Semiconductor 功能描述:ANA HI-SPD/S.S. QUAD O.A - Tape and Reel |
| NCV33074ADTBR2G | 功能描述:运算放大器 - 运放 ANA HI-SPD/S.S. QUAD O.A RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
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| NCV33079DR2G | 制造商:ON Semiconductor 功能描述: |
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