参数资料
| 型号： | NCV33161DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/18页 |
| 文件大小： | 0K |
| 描述： | IC VOLTAGE MONITOR UNIV 8-SOIC |
| 标准包装： | 1 |
| 类型： | 多压监控器 |
| 监视电压数目： | 2 |
| 输出： | 开路漏极或开路集电极 |
| 复位： | 低有效 |
| 电压 - 阀值： | 可调节/可选择 |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | NCV33161DR2GOSCT |
MC34161, MC33161, NCV33161
MAXIMUM RATINGS (Note 1)
Rating
Power Supply Input Voltage
Comparator Input Voltage Range
Comparator Output Sink Current (Pins 5 and 6) (Note 2)
Comparator Output Voltage
Power Dissipation and Thermal Characteristics (Note 2)
P Suffix, Plastic Package, Case 626
Maximum Power Dissipation @ T A = 70 ° C
Thermal Resistance, Junction ? to ? Air
D Suffix, Plastic Package, Case 751
Maximum Power Dissipation @ T A = 70 ° C
Thermal Resistance, Junction ? to ? Air
DM Suffix, Plastic Package, Case 846A
Thermal Resistance, Junction ? to ? Ambient
Operating Junction Temperature
Operating Ambient Temperature (Note 3)
MC34161
MC33161
NCV33161
Storage Temperature Range
Symbol
V CC
V in
I Sink
V out
P D
R q JA
P D
R q JA
R q JA
T J
T A
T stg
Value
40
? 1.0 to +40
20
40
800
100
450
178
240
+150
0 to +70
? 40 to +105
? 40 to +125
? 55 to +150
Unit
V
V
mA
V
mW
° C/W
mW
° C/W
° C/W
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL ? STD ? 883, Method 3015.
Machine Model Method 200 V.
2. Maximum package power dissipation must be observed.
3. T low = 0 ° C for MC34161 T high = +70 ° C for MC34161
? 40 ° C for MC33161 +105 ° C for MC33161
? 40 ° C for NCV33161 +125 ° C for NCV33161
http://onsemi.com
2
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