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参数资料
| 型号： | NCV4264-2ST33T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3.3V .1A SOT-223 |
| 标准包装： | 4,000 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 3.3V |
| 输入电压： | 4.5 V ~ 45 V |
| 稳压器数量： | 1 |
| 电流 - 输出： | 100mA |
| 电流 - 限制（最小）： | 150mA |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
NCV4264 ? 2
THERMAL RESISTANCE
Parameter
Symbol
Min
Max
Unit
Junction ? to ? Ambient
Junction ? to ? Case
SOT ? 223
SOT ? 223
R q JA
R q JC
?
?
99 (Note 4)
17
° C/W
ELECTRICAL CHARACTERISTICS (V IN = 13.5 V, T J = ? 40 ° C to +150 ° C, unless otherwise noted.)
Characteristic
Output Voltage
5.0 V Version
Output Voltage
3.3 V Version
Output Voltage
3.3 V Version
Line Regulation
5.0 V Version
Line Regulation
3.3 V Version
Load Regulation
Dropout Voltage ? 5.0 V Version
Dropout Voltage ? 3.3 V Version
Quiescent Current
Active Ground Current
Power Supply Rejection
Output Capacitor for Stability
5.0 V Version
Output Capacitor for Stability
3.3 V Version
Symbol
V OUT
V OUT
V OUT
D V OUT vs. V IN
D V OUT vs. V IN
D V OUT vs. I OUT
V IN ? V OUT
V IN ? V OUT
I q
I G(ON)
PSRR
C OUT
ESR
C OUT
ESR
Test Conditions
5.0 mA v I OUT v 100 mA (Note 5)
6.0 V v V IN v 28 V
5.0 mA v I OUT v 100 mA (Note 5)
4.5 V v V IN v 28 V
I OUT = 5 mA, V IN = 4 V (Note 7)
I OUT = 5.0 mA
6.0 V v V IN v 28 V
I OUT = 5.0 mA
4.5 V v V IN v 28 V
1.0 mA v I OUT v 100 mA (Note 5)
I OUT = 100 mA (Notes 5 & 6)
I OUT = 100 mA (Notes 5 & 8)
I OUT = 100 m A
T J = 25 ° C
T J = ? 40 ° C to +85 ° C
T J = ? 40 ° C to 150 ° C
I OUT = 50 mA (Note 5)
V RIPPLE = 0.5 V P ? P , F = 100 Hz
I OUT = 0.1 mA to 100 mA
(Notes 5)
I OUT = 0.1 mA to 100 mA
(Notes 5)
Min
4.900
3.234
3.234
? 30
? 30
? 40
?
?
?
?
?
?
?
10
?
22
?
Typ
5.000
3.300
3.300
5.0
5.0
5.0
270
?
33
33
33
1.5
67
?
?
?
?
Max
5.100
3.366
3.366
+30
+30
+40
500
1.266
55
60
70
4.0
?
?
9.0
?
16
Unit
V
V
V
mV
mV
mV
mV
V
m A
mA
dB
m F
W
m F
W
PROTECTION
Current Limit
Short Circuit Current Limit
Thermal Shutdown Threshold
I OUT(LIM)
I OUT(SC)
T TSD
V OUT = 4.5 V (5.0 V Version) (Note 5)
V OUT = 3.0 V (3.3 V Version) (Note 5)
V OUT = 0 V (Note 5)
(Note 7)
150
150
40
150
?
?
?
?
500
500
500
200
mA
mA
° C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. 1 oz., 100 mm 2 copper area.
5. Use pulse loading to limit power dissipation.
6. Dropout voltage = (V IN –V OUT ), measured when the output voltage has dropped 100 mV relative to the nominal value obtained with
V IN = 13.5 V.
7. Not tested in production. Limits are guaranteed by design.
8. V DO = V IN ? V OUT . For output voltage set to < 4.5 V, V DO will be constrained by the minimum input voltage.
4.5 ? 45 V
Input
C in
100 nF
V in
1
4264 ? 2
2
3
V out
Output
C OUT
10 m F ? 5.0 V Version
22 m F ? 3.3 V Version
GND
Figure 2. Applications Circuit
http://onsemi.com
3
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