参数资料
型号: NCV4274DT33RKG
厂商: ON Semiconductor
文件页数: 2/18页
文件大小: 0K
描述: IC REG LDO 3.3V .4A DPAK
产品变化通告: NCV42xx Obsolescence 27/Apr/2011
标准包装: 1
稳压器拓扑结构: 正,固定式
输出电压: 3.3V
输入电压: 4.5 V ~ 40 V
稳压器数量: 1
电流 - 输出: 400mA
电流 - 限制(最小): 400mA
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: DPAK-3
包装: 剪切带 (CT)
其它名称: NCV4274DT33RKGOSCT
NCV4274, NCV4274A
I
Q
Bandgap
Refernece
?
+
Current Limit and
Saturation Sense
Thermal
Shutdown
GND
Figure 1. Block Diagram
Pin Definitions and Functions
Pin No.
1
2,4
3
Symbol
I
GND
Q
Function
Input; Bypass directly at the IC a ceramic capacitor to GND.
Ground
Output; Bypass with a capacitor to GND.
1. DPAK 3LD package code 6025
2. D2PAK 3LD package code 6083
ABSOLUTE MAXIMUM RATINGS
Pin Symbol, Parameter
Symbol
Condition
Min
Max
Unit
I , Input ? to ? Regulator
Voltage
Current
V I
I I
? 42
Internally
Limited
45
Internally
Limited
V
I , Input peak Transient Voltage to Regulator with Respect
to GND
V I
60
V
Q, Regulated Output
Voltage
V Q
V Q = V I
? 1.0
40
V
Current
I Q
Internally
Limited
Internally
Limited
GND, Ground Current
Junction Temperature
Storage Temperature
ESD Capability, Human Body Model
ESD Capability, Machine Model
ESD Capability, Charged Device Model
I GND
T J
T Stg
ESD HB
ESD MM
ESD CDM
?
?
? 50
4
200
1
100
150
150
mA
° C
° C
kV
V
kV
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC ? Q100 ? 002 (EIA/JESD22 ? A114)
ESD MM tested per AEC ? Q100 ? 003 (EIA/JESD22 ? A115)
ESD CDM tested per EIA/JES D22/C101, Field Induced Charge Model
http://onsemi.com
2
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