参数资料
型号: NCV571SN12T1G
厂商: ON Semiconductor
文件页数: 2/11页
文件大小: 0K
描述: IC REG LDO 1.2V .15A 5TSOP
标准包装: 1
稳压器拓扑结构: 正,固定式
输出电压: 1.2V
输入电压: 最高 12V
电压 - 压降(标准): 0.35V @ 10mA
稳压器数量: 1
电流 - 输出: 150mA(最小)
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 6-TSOP(0.059",1.50mm 宽)5 引线
供应商设备封装: 5-TSOP
包装: 标准包装
其它名称: NCV571SN12T1GOSDKR
NCP571, NCV571
PIN CONNECTIONS
TSOP ? 5 package
DFN6 package
V in
1
5 V out
V out 1
6 V in
GND
2
NC 2
EP
5 NC
Enable
3
4 NC
GND 3
4 Enable
PIN FUNCTION DESCRIPTION
(Top View)
(Top View)
DFN6
1
2
3
4
5
6
EP
TSOP ? 5
5
4
2
3
?
1
?
Pin Name
V out
NC
GND
Enable
NC
V in
EP
Description
Regulated output voltage.
No Internal Connection. It is recommended to connect this pin to GND potential.
Power supply ground.
This input is used to place the device into low ? power standby. When this input is
pulled low, the device is disabled. If this function is not used, Enable pin should be
connected to V in .
No Internal Connection. It is recommended to connect this pin to GND potential.
Positive power supply input voltage.
No Internal Connection. It is recommended to connect this pin to GND potential.
MAXIMUM RATINGS
Input Voltage
Enable Voltage
Output Voltage
Power Dissipation
Operating Junction Temperature
Rating
Symbol
V in
V EN
V out
P D
T J
Value
0 to 12
? 0.3 to V in + 0.3
? 0.3 to V in + 0.3
Internally Limited
+150
Unit
V
V
V
W
? C
Operating Ambient Temperature
NCP571
NCV571
T A
? 40 to +85
? 40 to +125
? C
Storage Temperature
ESD Capability, Human Body Model (Note 1)
ESD Capability, Machine Mode (Note 1)
ESD Capability, Charged Device Model (Note 1)
T stg
ESD HBM
ESD MM
ESD CDM
? 55 to +150
2000
200
1000
? C
V
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
ESD Human Body Model tested per AEC ? Q100 ? 002 (EIA/JESD22 ? A114)
ESD Machine Model tested per AEC ? Q100 ? 003 (EIA/JESD22 ? A115)
ESD Charged Device Model tested per EIA/JES D22/C101, Field Induced Charge Model (Jedec Standard)
2. Latchup capability (85 ? C) $ 100 mA DC with trigger voltage.
THERMAL CHARACTERISTICS
Rating
Symbol
Test Conditions
Typical Value
Unit
Junction ? to ? Ambient
PSIJ ? Lead 2
TSOP ? 5
TSOP ? 5
R q JA
Y J ? L2
1 oz Copper Thickness, 100 mm 2
1 oz Copper Thickness, 100 mm 2
250
68
? C/W
? C/W
Junction ? to ? Ambient
PSIJ ? Lead 2
DFN6
DFN6
R q JA
Y J ? L2
1 oz Copper Thickness, 100
1 oz Copper Thickness, 100
mm 2
mm 2
190
84
? C/W
? C/W
NOTE:
Single component mounted on an 80 x 80 x 1.5 mm FR4 PCB with stated copper head spreading area. Using the following
boundary conditions as stated in EIA/JESD 51 ? 1, 2, 3, 7, 12.
http://onsemi.com
2
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