参数资料
| 型号： | NCV7380DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/14页 |
| 文件大小： | 0K |
| 描述： | IC TRANSCEIVER LINEAR 8-SOIC |
| 产品变化通告： | Product Discontinuation 21/Jun/2007 |
| 标准包装： | 2,500 |
| 类型： | 收发器 |
| 驱动器/接收器数： | 1/1 |
| 规程： | LIN |
| 电源电压： | 7 V ~ 18 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NCV7380
http://onsemi.com
13
ESD/EMC Remarks
General Remarks
Electronic semiconductor products are sensitive to
Electro Static Discharge
(ESD).
Always
observe
ESD control
procedures
whenever
handling
semiconductor products.
ESD Test
The NCV7380 is tested according to MIL883D
(Human Body Model).
EMC
The test on EMC impacts is done according to ISO
76371 for power supply pins and ISO 76373 for data and
signal pins.
POWER SUPPLY PIN VS
Test Pulse
Condition
Duration
1
t1 = 5.0 s/US = 100 V/tD = 2.0 ms
5000 Pulses
2
t1 = 0.5 s/US = 100 V/tD = 0.05 ms
5000 Pulses
3a/b
US = 150 V/US = 100 V
Burst 100 ns/10 ms/90 ms Break
1 h
5
Ri = 0.5 W, tD = 400 ms
tr = 0.1 ms/UP + US = 40 V
10 Pulses Every 1 Min
DATA AND SIGNAL PINS BUS
Test Pulse
Condition
Duration
1
t1 = 5.0 s/US = 100 V/tD = 2.0 ms
1000 Pulses
2
t1 = 0.5 s/US = 100 V/tD = 0.05 ms
1000 Pulses
3a/b
US = 150 V/US = 100 V
Burst 100 ns/10 ms/90 ms Break
1000 Burst
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