参数资料
| 型号： | NCV7382D |
| 厂商： | ON Semiconductor |
| 文件页数： | 10/16页 |
| 文件大小： | 0K |
| 描述： | IC TRANSCEIVER LIN ENH 8-SOIC |
| 产品变化通告： | Product Discontinuation 21/Jun/2007 |
| 标准包装： | 98 |
| 类型： | 收发器 |
| 驱动器/接收器数： | 1/1 |
| 规程： | LIN |
| 电源电压： | 7 V ~ 18 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 管件 |
NCV7382
http://onsemi.com
3
Electrical Specification
All voltages are referenced to ground (GND). Positive
currents flow into the IC.
The maximum ratings (in accordance with IEC 134)
given in the table below are limiting values that do not lead
to a permanent damage of the device but exceeding any of
these limits may do so. Long term exposure to limiting
values may effect the reliability of the device.
OPERATING CONDITIONS
Characteristic
Symbol
Min
Max
Unit
VS
7.0
18
V
VCC
4.5
5.5
V
Operating Ambient Temperature
TA
-40
+125
°C
MAXIMUM RATINGS
Rating
Symbol
Condition
Min
Max
Unit
VS
t < 1 min
-0.3
30
V
Load Dump, t < 500 ms
40
VCC
-
-0.3
+7.0
V
Transient Supply Voltage
VS.tr1
ISO 7637/1 Pulse 1 (Note 1)
-150
-
V
Transient Supply Voltage
VS..tr2
ISO 7637/1 Pulses 2 (Note 1)
-
100
V
Transient Supply Voltage
VS..tr3
ISO 7637/1 Pulses 3A, 3B
-150
150
V
BUS Voltage
VBUS
t < 500 ms , Vs = 18 V
-27
40
V
t < 500 ms ,Vs = 0 V
-40
Transient Bus Voltage
VBUS..tr1
ISO 7637/1 Pulse 1 (Note 2)
-150
-
V
Transient Bus Voltage
VBUS.tr2
ISO 7637/1 Pulses 2 (Note 2)
-
100
V
Transient Bus Voltage
VBUS.tr3
ISO 7637/1 Pulses 3A, 3B (Note 2)
-150
150
V
DC Voltage on Pins TxD, RxD
VDC
-
-0.3
7.0
V
ESD Capability, Charged Device Model
VESDCDM
(Note 3)
-1.0
1.0
kV
ESD Capability of BUS, RxD, TxD, VCC, EN Pins
ESD Capability of VS Pin
VESDHBM
Human Body Model, equivalent to
discharge 100 pF with 1.5 k
W (Note 3)
-2.0
-1.5
2.0
1.5
kV
Maximum Latchup Free Current at Any Pin
ILATCH
-
-500
500
mA
Maximum Power Dissipation
Ptot
At TA = 125°C
-
197
mW
Thermal Impedance
qJA
In Free Air
-
152
°C/W
Storage Temperature
Tstg
-
-55
+150
°C
Junction Temperature
TJ
-
-40
+150
°C
LEAD TEMPERATURE SOLDERING REFLOW
Lead Free, 60 sec -150 sec above 217, 40 sec Max at Peak
TSLD
-
265 Peak
°C
Leaded, 60 sec -150 sec above 183, 30 sec Max at Peak
TSLD
-
240 Peak
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. ISO 7637 test pulses are applied to VS via a reverse polarity diode and > 2.0 mF blocking capacitor.
2. ISO 7637 test pulses are applied to BUS via a coupling capacitance of 1.0 nF.
3. This device incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC-Q100-002 (EIA/JESD22-A 114C)
ESD CDM tested per EIA/JESD22-C 101C, Field Induced Model.
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相关代理商/技术参数 |
参数描述 |
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| NCV7382DG | 功能描述:IC TRANSCEIVER LIN ENH 8-SOIC RoHS:是 类别:集成电路 (IC) >> 接口 - 驱动器，接收器，收发器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:25 系列:- 类型:收发器 驱动器/接收器数:2/2 规程:RS232 电源电压:4.5 V ~ 5.5 V 安装类型:通孔 封装/外壳:16-DIP（0.300"，7.62mm） 供应商设备封装:16-PDIP 包装:管件 |
| NCV7382DR2 | 功能描述:IC TRANSCEIVER LIN ENH 8-SOIC RoHS:否 类别:集成电路 (IC) >> 接口 - 驱动器，接收器，收发器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:25 系列:- 类型:收发器 驱动器/接收器数:2/2 规程:RS232 电源电压:4.5 V ~ 5.5 V 安装类型:通孔 封装/外壳:16-DIP（0.300"，7.62mm） 供应商设备封装:16-PDIP 包装:管件 |
| NCV7382DR2G | 功能描述:射频收发器 ENHANCED LIN TRNSCVR RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray |
| NCV7383 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:FlexRay Bus Driver |
| NCV7383DB0R2G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:FlexRay Bus Driver |
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