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| 型号： | NCV7513FTG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/23页 |
| 文件大小： | 0K |
| 描述： | IC PREDRIVER HEX LOSIDE 32-LQFP |
| 标准包装： | 250 |
| 系列： | FLEXMOS™ |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 1.0µs |
| 电流 - 峰： | 5.25mA |
| 配置数： | 6 |
| 输出数： | 6 |
| 电源电压： | 4.75 V ~ 5.25 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-LQFP |
| 供应商设备封装： | 32-LQFP（7x7） |
| 包装： | 托盘 |
NCV7513
FLEXMOS t Hex Low-Side
MOSFET Pre-Driver
NCV7513
AWLYYWWG
The NCV7513 programmable six channel low ? side MOSFET
pre ? driver is one of a family of FLEXMOS TM automotive grade
products for driving logic ? level MOSFETs. The product is
controllable by a combination of serial SPI and parallel inputs. It
features programmable fault management modes and allows
power ? limiting PWM operation with programmable refresh time.
The device offers 3.3 V/5.0 V compatible inputs and the serial output
driver can be powered from either 3.3 V or 5.0 V. Power ? on reset
provides controlled powerup and two enable inputs allow all outputs
to be simultaneously disabled.
Each channel independently monitors its external MOSFET’s
drain voltage for fault conditions. Shorted load fault detection
thresholds are fully programmable using an externally programmed
reference voltage and a combination of four discrete internal ratio
values. The ratio values are SPI selectable and allow different
detection thresholds for each group of three output channels.
Fault information for each channel is 2 ? bit encoded by fault type
and is available through SPI communication. Fault recovery
operation for each channel is programmable and may be selected for
latch ? off or automatic retry.
The FLEXMOS family of products offers application scalability
through choice of external MOSFETs.
Features
? 16 ? Bit SPI with Frame Error Detection
? 3.3 V/5.0 V Compatible Parallel and Serial Control Inputs
? 3.3 V/5.0 V Compatible Serial Output Driver
? Two Enable Inputs
? Open ? Drain Fault and Status Flags
? Programmable
? Shorted Load Fault Detection Thresholds
? Fault Recovery Mode
? Fault Retry Timer
http://onsemi.com
MARKING
DIAGRAM
32 LEAD LQFP
FT SUFFIX
CASE 873A
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = Pb ? Free Package
ORDERING INFORMATION
Device Package Shipping ?
NCV7513FTG LQFP 250 Units/Tray
(Pb ? Free)
NCV7513FTR2G LQFP 2000 Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
?
?
?
?
?
? Flag Masking
Load Diagnostics with Latched Unique Fault Type Data
? Shorted Load
? Open Load
? Short to GND
AEC Qualified
PPAP Capable
NCV Prefix for Automotive and Other Applications Requiring Site
and Change Controls
These are Pb ? Free Devices*
Benefits
? Scalable to Load by Choice of External MOSFET
*For additional information on our Pb ? Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
? Semiconductor Components Industries, LLC, 2009
March, 2009 ? Rev. 3
1
Publication Order Number:
NCV7513/D
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相关代理商/技术参数 |
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|---|---|
| NCV7513FTR2G | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7517 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:FLEXMOS Hex Low-Side MOSFET Pre-Driver |
| NCV7517BFTR2G | 功能描述:功率驱动器IC ANA HEX LOW-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7517FTG | 功能描述:功率驱动器IC HEX LO-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV7517FTR2G | 功能描述:功率驱动器IC HEX LO-SIDE PRE DRIV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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