参数资料
型号: NCV7702BDWR2G
厂商: ON Semiconductor
文件页数: 5/9页
文件大小: 0K
描述: IC DRVR H-BRDG 1A DUAL 24-SOIC
标准包装: 1
类型: 半桥
输入类型: 非反相
输出数: 4
电流 - 峰值输出: 900mA
电源电压: 7 V ~ 16 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 24-SOIC(0.295",7.50mm 宽)
供应商设备封装: 24-SOIC
包装: 剪切带 (CT)
其它名称: NCV7702BDWR2GOSCT
NCV7702B
INPUT LOGIC TABLE
EN1 = EN2 = 0 = Standby Mode
Channel #1
Channel #2
EN1
1
1
1
1
0
IN1A
0
0
1
1
X
IN1B
0
1
0
1
X
OUT1A
Low
Low
High
High
|Z|
OUT1B
Low
High
Low
High
|Z|
Mode
Brake Low
Run
Run
Brake High
Off
EN2
1
1
1
1
0
IN2A
0
0
1
1
X
IN2B
0
1
0
1
X
OUT2A
Low
Low
High
High
|Z|
OUT2B
Low
High
Low
High
|Z|
Mode
Brake Low
Run
Run
Brake High
Off
NOTE:
X = Don't Care; |Z| = Output Off.
STATUS OUTPUT TABLE
STATUS1
1
0
1
0
STATUS2
1
1
0
0
Fault Diagnostic
No Fault.
Channel 1 Overcurrent; Note 9
Channel 2 Overcurrent; Note 9
Overvoltage, Overtemperature or Overcurrent in Both Channels; Notes 9 and 10
9. During overcurrent, the STATUS outputs will be modulated at the overcurrent duty cycle rate. See Figure 5.
10. During overtemperature, the STATUS outputs will be modulated by the thermal time constants.
+14 V
1
VB1
VB2
24
OUT X
R
R
OUT1B
OUT1A
STATUS1
PGND
PGND
OUT2B
OUT2A
STATUS2
PGND
PGND
NCV7702B
PGND
PGND
PGND
PGND
IN X
EN X
12
IN1A
IN1B
AGND
EN1
IN2A
IN2B
CT
EN2
13
Figure 2. Propagation Delay and Dead Band Timing Test Circuit
http://onsemi.com
5
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