参数资料
| 型号： | NCV8402STT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IC DVR LOW SIDE SOT-223-4 |
| 标准包装： | 1 |
| 系列： | SMARTDISCRETES™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 165 毫欧 |
| 电流 - 输出 / 通道： | 2A |
| 电流 - 峰值输出： | 4.8A |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 标准包装 |
| 其它名称： | NCV8402STT1GOSDKR |
NCV8402, NCV8402A
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8402/A is a three terminal protected Low ? Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain ? to ? Gate clamping for overvoltage
http://onsemi.com
protection. This device offers protection and is suitable for harsh
automotive environments.
V (BR)DSS
(Clamped)
R DS(ON) TYP
I D MAX
Protection
Features
? Short ? Circuit Protection
? Thermal Shutdown with Automatic Restart
? Overvoltage Protection
? Integrated Clamp for Inductive Switching
? ESD Protection
? dV/dt Robustness
? Analog Drive Capability (Logic Level Input)
? NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
Typical Applications
? Switch a Variety of Resistive, Inductive and Capacitive Loads
? Can Replace Electromechanical Relays and Discrete Circuits
? Automotive / Industrial
42 V 165 m W @ 10 V 2.0 A*
*Max current limit value is dependent on input
condition.
Drain
Overvoltage
Gate
Input
ESD Protection
Temperature Current Current
Limit Limit Sense
Source
MARKING
DIAGRAM
DRAIN
1
2
3
4
SOT ? 223
CASE 318E
STYLE 3
1
4
AYW
xxxxx G
G
2 3
GATE
DRAIN
A = Assembly Location
Y = Year
W = Work Week
xxxxx = V8402 or 8402A
SOURCE
G
= Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NCV8402STT1G
NCV8402ASTT1G
NCV8402STT3G
NCV8402ASTT3G
Package
SOT ? 223
(Pb ? Free)
SOT ? 223
(Pb ? Free)
Shipping ?
1000/Tape & Reel
4000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
February, 2012 ? Rev. 8
1
Publication Order Number:
NCV8402/D
相关PDF资料 |
PDF描述 |
|---|---|
| NCV8403ASTT1G | IC DVR LOW SIDE SOT-223-4 |
| NCV8403STT1G | IC DRIVER LOW SIDE SOT-223-4 |
| NCV8405ASTT1G | IC DRIVER LOW SIDE SOT-223-4 |
| NCV8406ASTT1G | IC DRIVER LOW SIDE SOT-223-4 |
| NCV8406ASTT3G | IC DVR LOW SIDE SOT-223-4 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8402STT3G | 功能描述:MOSFET NCV8402 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8403 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 14 A, Single N−Channel, SOT−223 |
| NCV8403ADTRKG | 功能描述:MOSFET SELF PROTECTED FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8403ASTT1G | 功能描述:MOSFET SELF PROTECTED FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8403ASTT3G | 功能描述:MOSFET SELF PROTECTED FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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