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| 型号： | NCV8403ASTT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC DVR LOW SIDE SOT-223-4 |
| 标准包装： | 4,000 |
| 系列： | * |
NCV8403, NCV8403A
Self-Protected Low Side
Driver with Temperature
and Current Limit
42 V, 14 A, Single N ? Channel, SOT ? 223
NCV8403/A is a three terminal protected Low-Side Smart Discrete
http://onsemi.com
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
V DSS
(Clamped)
42 V
R DS(on) TYP
53 m W @ 10 V
I D MAX
(Limited)
15 A
DRAIN
2
AYW
xxxxx G
G
1 2 3
Features
? Short Circuit Protection
? Thermal Shutdown with Automatic Restart
? Over Voltage Protection
? Integrated Clamp for Inductive Switching
? ESD Protection
? dV/dt Robustness
? Analog Drive Capability (Logic Level Input)
? AEC ? Q101 Qualified and PPAP Capable
? NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
? These Devices are Pb ? Free and are RoHS Compliant
Typical Applications
? Switch a Variety of Resistive, Inductive and Capacitive Loads
? Can Replace Electromechanical Relays and Discrete Circuits
? Automotive / Industrial
Gate
Input
Drain
Overvoltage
Protection
ESD Protection
Temperature Current Current
Limit Limit Sense
Source
MARKING
DIAGRAM
4
1 4
3
SOT ? 223
CASE 318E
STYLE 3
GATE SOURCE
DRAIN
4
1 2
YWW
3
xxxxxG
DPAK
CASE 369C
A = Assembly Location
Y = Year
W, WW = Work Week
xxxxx = V8403 or 8403A
G or G
= Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
November, 2011 ? Rev. 5
1
Publication Order Number:
NCV8403/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8403DTRKG | 功能描述:MOSFET 42V 14A SINGLE N CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8403STT1G | 功能描述:MOSFET NCV8403 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8403STT3G | 功能描述:MOSFET NCV8403 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8405 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-Protected Low Side Driver with Temperature and Current Limit |
| NCV8405A | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-Protected Low Side Driver with Temperature and Current Limit |
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