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| 型号： | NCV8405ADTRKG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER LOW SIDE DPAK-3 |
| 标准包装： | 1 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 90 毫欧 |
| 电流 - 输出 / 通道： | 6A |
| 电流 - 峰值输出： | 9A |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | NCV8405ADTRKGOSDKR |
NCV8405, NCV8405A
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8405/A is a three terminal protected Low ? Side Smart Discrete
Protection
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain ? to ? Gate clamping for overvoltage
protection. This device is suitable for harsh automotive environments.
Features
? Short ? Circuit Protection
? Thermal Shutdown with Automatic Restart
? Overvoltage Protection
? Integrated Clamp for Inductive Switching
? ESD Protection
? dV/dt Robustness
? Analog Drive Capability (Logic Level Input)
? NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q100
http://onsemi.com
V (BR)DSS
(Clamped) R DS(ON) TYP I D MAX
42 V 90 m W @ 10 V 6.0 A*
*Max current limit value is dependent on input
condition.
Drain
Overvoltage
Gate
Input
ESD Protection
?
Qualified and PPAP Capable
These Devices are Pb ? Free and are RoHS Compliant
Temperature
Limit
Current
Limit
Current
Sense
Typical Applications
? Switch a Variety of Resistive, Inductive and Capacitive Loads
? Can Replace Electromechanical Relays and Discrete Circuits
? Automotive / Industrial
4
Source
MARKING
DIAGRAM
DRAIN
2
1
3
SOT ? 223
CASE 318E
STYLE 3
4
1
GATE
AYW
xxxxx G
G
2 3
SOURCE
1 2
3
DPAK
4
DRAIN
YWW
xxxxxG
CASE 369C
A = Assembly Location
Y = Year
W, WW = Work Week
xxxxx = V8405 or 8405A
G or G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
October, 2012 ? Rev. 3
1
Publication Order Number:
NCV8405/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8405ASTT1G | 功能描述:MOSFET SELF PROTECTED LOW SIDE F RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8405ASTT3G | 功能描述:IC DRIVER LOW SIDE SOT-223-4 RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:1 系列:- 类型:高端 输入类型:非反相 输出数:1 导通状态电阻:85 毫欧 电流 - 输出 / 通道:2A 电流 - 峰值输出:6A 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:4-UFDFN 裸露焊盘，4-TMLF? 供应商设备封装:4-TMLF?（1.2x1.6） 包装:剪切带 (CT) 其它名称:576-1574-1 |
| NCV8405DTRKG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-Protected Low Side Driver with Temperature and Current Limit |
| NCV8405STT1G | 功能描述:MOSFET SELF-PROTECTED FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8405STT3G | 功能描述:MOSFET SELF-PROTECTED FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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