参数资料
| 型号： | NCV8406ASTT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER LOW SIDE SOT-223-4 |
| 标准包装： | 1,000 |
| 系列： | * |
NCV8406, NCV8406A
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Clamped Breakdown Voltage
(V GS = 0 V, I D = 2 mA)
Zero Gate Voltage Drain Current
(V DS = 52 V, V GS = 0 V)
Gate Input Current
(V GS = 5.0 V, V DS = 0 V)
V (BR)DSS
I DSS
I GSS
60
?
?
65
22
30
70
100
100
V
m A
m A
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = V GS , I D = 150 m A)
Threshold Temperature Coefficient
Static Drain ? to ? Source On ? Resistance (Note 3)
(V GS = 10 V, I D = 2.0 A, T J @ 25 ° C)
Static Drain ? to ? Source On ? Resistance (Note 3)
(V GS = 5.0 V, I D = 2.0 A, T J @ 25 ° C)
(V GS = 5.0 V, I D = 2.0 A, T J @ 150 ° C)
Source ? Drain Forward On Voltage
(I S = 7.0 A, V GS = 0 V)
V GS(th)
R DS(on)
R DS(on)
V SD
1.2
?
?
?
?
?
1.66
4.0
185
210
445
0.9
2.0
?
210
240
520
1.1
V
? mV/ ° C
m W
m W
V
SWITCHING CHARACTERISTICS (Note 6)
Turn ? on Delay Time
Turn ? on Rise Time
Turn ? off Delay Time
Turn ? off Fall Time
Slew Rate ON
Slew Rate OFF
R L = 6.6 W , V in = 0 to 10 V,
V DD = 13.8 V, I D = 2.0 A, 10% V in to 10% I D
R L = 6.6 W , V in = 0 to 10 V,
V DD = 13.8 V, I D = 2.0 A, 10% I D to 90% I D
R L = 6.6 W , V in = 0 to 10 V,
V DD = 13.8 V, I D = 2.0 A, 90% V in to 90% I D
R L = 6.6 W , V in = 0 to 10 V,
V DD = 13.8 V, I D = 2.0 A, 90% I D to 10% I D
R L = 6.6 W , V in = 0 to 10 V,
V DD = 13.8 V, I D = 2.0 A, 70% to 50% V DD
R L = 6.6 W , V in = 0 to 10 V,
V DD = 13.8 V, I D = 2.0 A, 50% to 70% V DD
td (on)
t rise
td (off)
t fall
dV DS /dT on
dV DS /dT off
?
?
?
?
?
?
127
486
1600
692
79
27
?
?
?
?
?
?
ns
ns
ns
ns
V/ m s
V/ m s
SELF PROTECTION CHARACTERISTICS (Note 4)
Current Limit
Temperature Limit (Turn ? off)
Thermal Hysteresis
Temperature Limit (Turn ? off)
Thermal Hysteresis
Input Current during
Thermal Fault
V DS = 10 V, V GS = 5.0 V, T J = 25 ° C (Note 5)
V DS = 10 V, V GS = 5.0 V, T J = 150 ° C (Notes 5, 6)
V DS = 10 V, V GS = 10 V, T J = 25 ° C (Notes 5)
V GS = 5.0 V (Note 6)
V GS = 5.0 V
V GS = 10 V (Note 6)
V GS = 10 V
V DS = 0 V, V GS = 5.0 V, T J = T J > T (fault) (Note 6)
V DS = 0 V, V GS = 10 V, T J = T J > T (fault) (Note 6)
I LIM
T LIM(off)
D T LIM(on)
T LIM(off)
D T LIM(on)
I g(fault)
5.0
3.5
6.5
150
?
150
?
?
?
7.0
4.5
8.5
180
10
180
20
5.9
12.3
9.5
6.0
10.5
200
?
200
?
?
A
° C
° C
° C
° C
mA
ESD ELECTRICAL CHARACTERISTICS
Electro ? Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
6000
500
?
?
?
?
V
3.
4.
5.
6.
Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
Fault conditions are viewed as beyond the normal operating range of the part.
Current limit measured at 380 m s after gate pulse.
Not subject to production test.
http://onsemi.com
3
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| NCV8406ASTT3G | 功能描述:MOSFET 65V SMARTFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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