参数资料
| 型号： | NCV8450ASTT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/9页 |
| 文件大小： | 0K |
| 描述： | IC DVR HIGH SIDE SOT-223-4 |
| 标准包装： | 4,000 |
| 系列： | * |
NCV8450, NCV8450A
TYPICAL CHARACTERISTIC CURVES
140
120
100
80
60
40
20
PCB Cu thickness, 1.0 oz
PCB Cu thickness, 2.0 oz
0
0
100 200
300 400 500 600
700
COPPER HEAT SPREADER AREA (mm 2 )
Figure 20. R q JA vs. Copper Area
1000
100
Duty Cycle = 0.5
0.01
0.2
10 0.1
0.05
0.02
1
0.1 Single Pulse
0.01
Psi TSP ? A(t)
0.001
1E ? 06
1E ? 05
1E ? 04
1E ? 03
1E ? 02
1E ? 01
1E+00
1E+01
1E+02
1E+03
PULSE TIME (s)
Figure 21. Transient Thermal Response
ISO PULSE TEST RESULTS
Test Pulse
1
2
3a
3b
5
Test Level
200 V
150 V
200 V
200 V
175 V
Test Results
C
C
C
C
E(100 V)
Pulse Cycle Time and Generator Impedance
500 ms, 10 W
500 ms, 10 W
100 ms, 50 W
100 ms, 50 W
400 ms, 2 W
ORDERING INFORMATION
Device
NCV8450STT3G
NCV8450ASTT3G
Package
SOT ? 223
(Pb ? Free)
SOT ? 223
(Pb ? Free)
Shipping ?
4000 / Tape & Reel
4000 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8450STT3G | 功能描述:MOSFET SELF PROTECTED HIGH SIDE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NCV8452 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self Protected High Side Driver with Temperature |
| NCV8452STT1G | 制造商:ON Semiconductor 功能描述:40V SINGLE CHANNEL HS DRI - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / 40V SINGLE CHANNEL HS DRI |
| NCV8452STT3G | 制造商:ON Semiconductor 功能描述:40V SINGLE CHANNEL HS DRI - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / 40V SINGLE CHANNEL HS DRI |
| NCV8460 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self Protected High Side Driver with Temperature Shutdown and Current Limit |
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