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参数资料
| 型号： | NCV8509PDW26G |
| 厂商： | ON Semiconductor |
| 文件页数： | 14/18页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 5V/2.6V 16-SOIC |
| 标准包装： | 47 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 5V，2.6V |
| 输入电压： | 最高 50V |
| 电压 - 压降（标准）： | 0.4V @ 100mA |
| 稳压器数量： | 2 |
| 电流 - 限制（最小）： | 115mA，105mA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽）裸露焊盘 |
| 供应商设备封装： | 16-SOIC W |
| 包装： | 管件 |
NCV8509 Series
NCV8509
Power Dissipation
NCV8509 has a power shunt circuit which reduces the
V IN1
Shunt
PIC + PTOTAL * PREX
power on chip by utilizing an external resistor, R EX . Thus
the power on chip, P IC , is equal to the total power, P T , minus
the power dissipated in the resistor P REX . Refer to Figure 49.
(1)
where
R EX
+
V SAT Q1
?
V Z
Iq
PTOTAL + (VIN1 * VOUT1) IOUT1
) (VIN1 * VOUT2) IOUT2 ) (VIN1
and
PREX + (VIN1 * VIN2) IOUT2
(2)
Iq)
(3)
V IN2
V OUT2
Q2
Control
Circuitry
Q3
V OUT1
I OUT2
Figure 49.
GND
I OUT1
IN1
SAT
for VIN1 t (VREF ) VSAT)
(4)
VIN2 +
VREF
VIN1 * (IOUT2
REX)
for (VREF ) VSAT) t VIN1 t (VREF ) (IOUT2
for (VREF ) (IOUT2 IOUT)) t VIN1
REX))
where V REF = V Z ? V BE when Q1 is normally conducting.
PMODE1 + (VSAT
IOUT2)
PMODE2 + (VIN1 * VREF)
IOUT2
PMODE3 + IOUT22
REX
Based on equation 3, the power in R EX is dependent on
V IN2 . (Increasing R EX may require an increase in C IN2 . A
careful system validation should be performed for stability).
The voltage on V IN2 is controlled by the shunt circuit, which
has three modes of operation, as seen in Figure 50.
Mode 1. At low battery V IN2 is equal to V IN1 minus the
saturation voltage of the shunt output NPN.
Mode 2. Once V IN1 rises above the reference voltage of
the shunt circuit, V IN2 will regulate at the V REF .
Mode 3. V IN2 would continue to regulate at V REF , but
since I OUT2 is not infinite, when V IN1 rises higher than the
reference voltage plus the voltage drop across the external
resistor R EX , it will force V IN2 to be V IN1 ? (I OUT2 × R EX ).
Equation 4 provides a summary for V IN2.
Combining equations 3 and 4 gives three different
equations for power across R EX .
(5)
(6)
(7)
http://onsemi.com
14
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8509PDW26R2 | 功能描述:线性稳压器 - 标准 2.6V 100mA Sequenced RoHS:否 制造商:STMicroelectronics 输出类型: 极性: 输出电压:1.8 V 输出电流:150 mA 负载调节: 最大输入电压:5.5 V 线路调整率: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOT-323-5L |
| NCV8509PDW26R2G | 功能描述:线性稳压器 - 标准 2.6V 100mA Sequenced Dual RoHS:否 制造商:STMicroelectronics 输出类型: 极性: 输出电压:1.8 V 输出电流:150 mA 负载调节: 最大输入电压:5.5 V 线路调整率: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOT-323-5L |
| NCV8512 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:5.0 V Micropower 150 mA LDO Linear Regulator with DELAY, Adjustable RESET, and Monitor FLAG |
| NCV8512PW50G | 功能描述:低压差稳压器 - LDO 5V MICROPOWER 150mA LDO RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| NCV8512PW50R2G | 功能描述:低压差稳压器 - LDO 5V MICROPOWER 150mA LDO RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
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