参数资料
型号: NCV8535MN285R2G
厂商: ON Semiconductor
文件页数: 4/22页
文件大小: 0K
描述: IC REG LDO 2.85V .7A 10-DFN
标准包装: 3,000
稳压器拓扑结构: 正,固定式
输出电压: 2.85V
输入电压: 3.25 V ~ 12 V
稳压器数量: 1
电流 - 输出: 700mA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-VFDFN 裸露焊盘
供应商设备封装: 10-DFN(3x3)
包装: 带卷 (TR)
NCV8535
PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
Description
FIXED VERSION
1, 2
3
4
7
8
9, 10
5, 6
EPAD
V out
SENSE
GND
NR
SD
V in
NC
EPAD
Regulated output voltage. Bypass to ground with C out w 1.0 m F.
For output voltage sensing, connect to Pins 1 and 2.
Power Supply Ground
Noise Reduction Pin. This is an optional pin used to further reduce noise.
Shutdown pin. When not in use, this pin should be connected to the input pin.
Power Supply Input Voltage
Not Connected
Exposed thermal pad should be connected to ground.
ADJUSTABLE VERSION
1, 2
3
4
7
8
9, 10
5, 6
EPAD
V out
Adj
GND
NR
SD
V in
NC
EPAD
Regulated output voltage. Bypass to ground with C out w 1.0 m F.
Adjustable pin; reference voltage = 1.25 V.
Power Supply Ground
Noise Reduction Pin. This is an optional pin used to further reduce noise.
Shutdown pin. When not in use, this pin should be connected to the input pin.
Power Supply Input Voltage
Not Connected
Exposed thermal pad should be connected to ground.
MAXIMUM RATINGS
Input Voltage
Output Voltage
Shutdown Pin Voltage
Junction Temperature Range
Storage Temperature Range
Rating
Symbol
V in
V out
V sh
T J
T stg
Value
? 0.3 to +16
? 0.3 to V in +0.3 or 10 V*
? 0.3 to +16
? 40 to +150
? 55 to +150
Unit
V
V
V
? C
? C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: This device series contains ESD protection and exceeds the following tests:
Human Body Model (HBM) tested per AEC ? Q100 ? 002 (EIA/JESD22 ? A114)
Machine Model (MM) tested per AEC ? Q100 ? 003 (EIA/JESD22 ? A115)
Charged Device Model (CDM) tested per EIA/JESD22 ? C101
*Which ever is less. Reverse bias protection feature valid only if V out ? V in ? 7 V.
THERMAL CHARACTERISTICS
Test Conditions (Typical Value)
Characteristic
Junction ? to ? Air, q JA
Junction ? to ? Pin, y JL2
Min Pad Board (Note 1)
215
55
1 , Pad Board (Note 1)
66
17
Unit
? C/W
? C/W
1. As mounted on a 35 x 35 x 1.5 mm FR4 Substrate, with a single layer of a specified copper area of 2 oz (0.07 mm thick) copper traces and
heat spreading area. JEDEC 51 specifications for a low and high conductivity test board recommend a 2 oz copper thickness. Test conditions
are under natural convection or zero air flow.
http://onsemi.com
4
相关PDF资料
PDF描述
TPSC107K006R0075 CAP TANT 100UF 6.3V 10% 2312
CENB1020A1403B01 POWER SUPPLY EXT 16.8W 14V @1.2A
T86D226M016EAAS CAP TANT 22UF 16V 20% 2917
ACM25DTMN-S189 CONN EDGECARD 50POS R/A .156 SLD
T86D226K016EAAS CAP TANT 22UF 16V 10% 2917
相关代理商/技术参数
参数描述
NCV8535MN300R2G 功能描述:低压差稳压器 - LDO 500mA LDO AUTO VERSN RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
NCV8535MN330R2G 功能描述:低压差稳压器 - LDO 500mA LDO AUTO VERSN RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
NCV8535MN350R2G 功能描述:IC REG LDO 3.5V .7A 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - 线性 系列:- 标准包装:1 系列:- 稳压器拓扑结构:正,可调式 输出电压:1.25 V ~ 10 V 输入电压:2.9 V ~ 12 V 电压 - 压降(标准):- 稳压器数量:1 电流 - 输出:700mA 电流 - 限制(最小):- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:10-VFDFN 裸露焊盘 供应商设备封装:10-DFN(3x3) 包装:Digi-Reel® 其它名称:NCV8535MNADJR2GOSDKR
NCV8535MN500R2G 功能描述:低压差稳压器 - LDO 500mA LDO AUTO VERSN RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
NCV8535MN500R2G/H 制造商:ON Semiconductor 功能描述: