参数资料
| 型号： | NCV8535MNADJR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/22页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO ADJ .7A 10-DFN |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，可调式 |
| 输出电压： | 1.25 V ~ 10 V |
| 输入电压： | 2.9 V ~ 12 V |
| 稳压器数量： | 1 |
| 电流 - 输出： | 700mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-VFDFN 裸露焊盘 |
| 供应商设备封装： | 10-DFN（3x3） |
| 包装： | 标准包装 |
| 其它名称： | NCV8535MNADJR2GOSDKR |
NCV8535
ELECTRICAL CHARACTERISTICS – 3.3 V
(V out = 3.3 V typical, V in = 3.7 V, T A = ? 40 ? C to +85 ? C, unless otherwise noted, Note 6.)
Characteristic
Output Voltage (Accuracy)
V in = 3.7 V to 7.3 V, I load = 0.1 mA to 500 mA, T A = 25 ? C
Output Voltage (Accuracy)
V in = 3.7 V to 7.3 V, I load = 0.1 mA to 500 mA, T A = 0 ? C to +85 ? C
Output Voltage (Accuracy)
V in = 3.7 V to 7.3 V, I load = 0.1 mA to 500 mA, T A = ? 40 ? C to +125 ? C
Symbol
V out
V out
V out
Min
? 0.9%
3.270
? 1.4%
3.254
? 1.5%
3.250
Typ
3.3
3.3
3.3
Max
+0.9%
3.330
+1.4%
3.346
+1.5%
3.350
Unit
V
V
V
Line Regulation
V in = 3.7 V to 12 V, I load = 0.1 mA
Load Regulation
V in = 3.7 V, I load = 0.1 mA to 500 mA
Dropout Voltage (See App Note)
I load = 500 mA
I load = 300 mA
I load = 50 mA
I load = 0.1 mA
Line Reg
Load Reg
V DO
0.04
0.04
340
230
110
10
mV/V
mV/mA
mV
Peak Output Current (See Figure 16)
Ipk
500
700
800
mA
Short Output Current (See Figure 16)
Thermal Shutdown
I sc
T J
160
900
mA
? C
Ground Current
In Regulation
I load = 500 mA (Note 7)
I load = 300 mA
I load = 50 mA
I load = 0.1 mA
In Dropout
V in = 3.2 V, I load = 0.1 mA
In Shutdown
S D = 0 V
I GND
I GNDsh
9.0
4.6
0.8
?
?
0.07
14
7.5
2.5
190
500
1.0
mA
m A
m A
m A
Output Noise
C nr = 0 nF, I load = 500 mA, f = 10 Hz to 100 kHz, C out = 10 m F
C nr = 10 nF, I load = 500 mA, f = 10 Hz to 100 kHz, C out = 10 m F
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
V noise
2.0
69
46
0.4
m Vrms
m Vrms
V
V
S D Input Current, V SD = 0 V to 0.4 V or V SD = 2.0 V to V in
Output Current In Shutdown Mode, V out = 0 V
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(V in = 0 V, V out_forced = 3.3 V)
I SD
I OSD
I OUTR
0.07
0.07
10
1.0
1.0
m A
m A
m A
6. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T J = T A = 25 ? C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
7. T A must be greater than 0 ? C.
http://onsemi.com
7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV8535MNADJR2G/H | 制造商:ON Semiconductor 功能描述: |
| NCV8537MN180GEVB | 功能描述:电源管理IC开发工具 NCV8537 1.8V EVB RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| NCV8537MN180R2G | 功能描述:低压差稳压器 - LDO LDO RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| NCV8537MN250GEVB | 功能描述:电源管理IC开发工具 NCV8537 2.5V EVB RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| NCV8537MN250R2G | 功能描述:低压差稳压器 - LDO LDO RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
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