参数资料
型号: NCV8570BSN33T1G
厂商: ON Semiconductor
文件页数: 8/20页
文件大小: 0K
描述: IC REG LDO 3.3V .2A 5TSOP
标准包装: 1
稳压器拓扑结构: 正,固定式
输出电压: 3.3V
输入电压: 最高 5.5V
电压 - 压降(标准): 0.11V @ 200mA
稳压器数量: 1
电流 - 输出: 200mA
电流 - 限制(最小): 200mA
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 6-TSOP(0.059",1.50mm 宽)5 引线
供应商设备封装: 5-TSOP
包装: 标准包装
其它名称: NCV8570BSN33T1GOSDKR
NCV8570B
TYPICAL CHARACTERISTICS
35
30
25
20
T A = 25 ? C,
C OUT = 1 m F,
V OUT = 3.3 V,
I OUT = 200 mA
V IN = 3.8 V
20
18
16
14
12
10
15
10
5
0
50
100 150 200 250 300 350 400 450 500
8
6
4
2
0
1
3
T A = 25 ? C,
C noise = 100 nF,
V OUT = 3.3 V,
I OUT = 200 mA
V IN = 3.8 V
5 7 9 11 13 15 17 19
21
30
28
C noise , NOISE BYPASS CAPACITOR (nF)
Figure 22. Output Noise vs. Noise Bypass
Capacitance, C OUT = 1 m F, V OUT = 3.3 V, I OUT =
200 mA
15
14
C OUT , OUTPUT CAPACITOR ( m F)
Figure 23. Output Noise vs. Output
Capacitance, C noise = 100 nF, V OUT = 3.3 V,
I OUT = 200 mA
26
24
22
20
18
16
V OUT = 3.3 V
V OUT = 2.8 V
V OUT = 1.8 V
13
12
11
10
9
8
V OUT = 3.3 V
V OUT = 2.8 V
V OUT = 1.8 V
14
12
10
0
T A = 25 ? C, C noise = 10 nF, C OUT = 1 m F,
V IN = V OUT + 0.5 V or 2.5 V, whichever is higher
25 50 75 100 125 150 175
200
7
6
5
0
T A = 25 ? C, C noise = 100 nF, C OUT = 1 m F,
V IN = V OUT + 0.5 V or 2.5 V, whichever is higher
25 50 75 100 125 150 175
200
I OUT , OUTPUT CURRENT (mA)
Figure 24. Output Noise vs. Load Current,
C noise = 10 nF, C OUT = 1 m F
I OUT , OUTPUT CURRENT (mA)
Figure 25. Output Noise vs. Load Current,
C noise = 100 nF, C OUT = 1 m F
300
200
1.85
1.80
1.75
200 mA
1 mA
100
0
1.70
1.65
1.60
0
C OUT = 4.7 m F, V IN = 2.5 V, C noise = 100 nF,
dI OUT /dt = 200 mA / 1 m s
40 80 120 160 200 240 280 320 360 400
t, TIME ( m s)
Figure 26. Load Transient Response, V OUT =
1.8 V, C OUT = 4.7 m F, C noise = 100 nF
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