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参数资料
| 型号： | NCV8570MN180R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 1.8V .2A 6-DFN |
| 产品变化通告： | NCV8570, NCP700/3985 Discontinuation 20/Aug/2011 |
| 标准包装： | 3,000 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 1.8V |
| 输入电压： | 2.5 V ~ 5.5 V |
| 稳压器数量： | 1 |
| 电流 - 输出： | 200mA |
| 电流 - 限制（最小）： | 200mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-VDFN 裸露焊盘 |
| 供应商设备封装： | 6-DFN（2x2.2） |
| 包装： | 带卷 (TR) |
NCV8570
ELECTRICAL CHARACTERISTICS
(V in = V out + 0.5 V, V CE = 1.2 V, C in = 0.1 m F, C out = 1 m F, C noise = 10 nF, T A = ? 40 ? C to 85 ? C , unless otherwise specified (Note 2))
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
REGULATOR OUTPUT
Input Voltage
V in
2.5
?
5.5
V
Output Voltage (Note 3)
Output Voltage (Note 3)
Power Supply Ripple Rejection
Line Regulation
Load Regulation
Output Noise Voltage
Output Current Limit
Output Short Circuit Current
Dropout Voltage (Note 4, 5)
Dropout Voltage (Note 6)
1.8 V
2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
1.8 V
2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
V in = (V out +0.5 V) to 5.5 V
I out = 1 mA
V in = (V out +0.5 V) to 5.5 V
I out = 1 mA to 200 mA
V in = V out +1.0 V + 0.5 V p ? p
I out = 1 mA to 150 mA f = 120 Hz
C noise = 100nF f = 1 kHz
f = 10 kHz
V in = (V out +0.5 V) to 5.5 V, I out = 1 mA
I out = 1 mA to 200 mA
f = 10 Hz to 100 kHz
I out = 1 mA to 150 mA C noise = 100 nF
C noise = 10 nF
V out = V out(nom) – 0.1 V
V out = 0 V
I out = 150 mA
I out = 200 mA
V out
V out
PSRR
Reg line
Reg load
V n
I LIM
I SC
V DO
V DO
1.764
2.450
2.695
2.744
2.940
3.234
( ? 2%)
1.746
2.425
2.6675
2.716
2.910
3.201
( ? 3%)
?
?
?
? 0.2
?
?
?
200
210
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
?
80
80
65
?
12
15
20
310
320
105
105
105
100
100
170
150
150
140
130
1.836
2.550
2.805
2.856
3.060
3.366
(+2%)
1.854
2.575
2.8325
2.884
3.090
3.399
(+3%)
?
?
?
0.2
25
?
?
470
490
155
155
155
150
150
215
205
205
200
200
V
V
dB
%/V
mV
m V rms
mA
mA
mV
mV
GENERAL
Ground Current
Disable Current
Thermal Shutdown Threshold (Note 4)
Thermal Shutdown Hysteresis (Note 4)
I out = 1 mA
I out = 200 mA
V CE = 0 V
I GND
I DIS
T SD
T SH
?
?
?
?
?
70
110
0.1
150
20
90
220
1
?
?
m A
m A
? C
? C
CHIP ENABLE
Input Threshold
Low
High
V th(CE)
?
1.2
?
?
0.4
?
V
Internal Pull ? Down Resistance (Note 7)
R PD(CE)
2.5
5
10
M W
TIMING
Turn ? on Time
Turn ? off Time
I out = 150 mA
C noise = 10 nF/100 nF
C noise = 10 nF
C noise = 100 nF
I out = 1 mA
I out = 10 mA
t on
t off
?
?
?
?
0.4
4
800
200
?
?
?
?
ms
m s
2. Performance guaranteed over the indicated operating temperature range by design and/or characterization, production tested at
T J = T A = 25 ? C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
3. Contact factory for other voltage options.
4. Guaranteed by design and characterization.
5. Characterized when output voltage falls 100 mV below the regulated voltage at V in = V out + 1 V if V out < 2.5 V, then V DO = V in ? V out at V in = 2.5 V.
6. Measured when output voltage falls 100 mV below the regulated voltage at V in = V out + 0.5 V if V out < 2.5 V, then V DO = V in ? V out at V in = 2.5 V.
7. Expected to disable device when CE pin is floating.
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