参数资料
型号: NCV8664ST33T3G
厂商: ON Semiconductor
文件页数: 2/14页
文件大小: 0K
描述: IC REG LDO 3.3V .15A SOT-223
标准包装: 1
稳压器拓扑结构: 正,固定式
输出电压: 3.3V
输入电压: 4.5 V ~ 45 V
稳压器数量: 1
电流 - 输出: 150mA
电流 - 限制(最小): 150mA
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223
包装: 剪切带 (CT)
其它名称: NCV8664ST33T3GOSCT
NCV8664
IN
Bias Current
Generators
OUT
1.3 V
Reference
+
Error
Amp
-
Thermal
Shutdown
GND
Figure 1. Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
DPAK/SOT ? 223
1
2
3
TAB
?
SOIC ? 8
2
3
4
?
1, 5 ? 8
Symbol
V IN
GND
V OUT
GND
NC
Function
Unregulated input voltage; 4.5 V to 45 V.
Ground; substrate.
Regulated output voltage; collector of the internal PNP pass transistor.
Ground; substrate and best thermal connection to the die.
No Connection.
OPERATING RANGE
Pin Symbol, Parameter
V IN , DC Input Operating Voltage
Junction Temperature Operating Range
Symbol
V IN
T J
Min
4.5
? 40
Max
+45
+150
Unit
V
° C
MAXIMUM RATINGS
Rating
V IN , DC Voltage
V OUT , DC Voltage
Storage Temperature
ESD Capability, Human Body Model (Note 1)
ESD Capability, Machine Model (Note 1)
Symbol
V IN
V OUT
T stg
V ESDHB
V ESDMIM
Min
? 42
? 0.3
? 55
4000
200
Max
+45
+18
+150
?
?
Unit
V
V
° C
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC ? Q100 ? 002 (EIA/JESD22 ? A 114C)
ESD MM tested per AEC ? Q100 ? 003 (EIA/JESD22 ? A 115C)
THERMAL RESISTANCE
Parameter
Symbol
Condition
Min
Max
Unit
Junction ? to ? Ambient
Junction ? to ? Case
DPAK
SOT ? 223
SOIC ? 8 Fused
DPAK
SOT ? 223
SOIC ? 8 Fused
R q JA
R q JC
?
?
?
?
?
?
101 (Note 2)
99 (Note 2)
145
9.0
17
?
° C/W
° C/W
2. 1 oz., 100 mm 2 copper area.
http://onsemi.com
2
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