参数资料
型号: NCV8665D50R2G
厂商: ON Semiconductor
文件页数: 2/11页
文件大小: 0K
描述: IC REG LDO 5V .15A 8-SOIC
标准包装: 2,500
稳压器拓扑结构: 正,固定式
输出电压: 5V
输入电压: 5.5 V ~ 45 V
电压 - 压降(标准): 0.25V @ 150mA
稳压器数量: 1
电流 - 输出: 150mA
电流 - 限制(最小): 150mA
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
NCV8665
PIN DESCRIPTIONS
Symbol
V IN
R O
GND
D
VOUT
Function
Unregulated input voltage; 5.5 V to 45 V; Battery Input Voltage. Bypass to GND with a 0.1 m F ceramic capacitor.
Reset Output; open collector active Reset (Accurate when V OUT > 1.0 V)
Ground; Pin 3 internally connected to Tab
Reset Delay; timing capacitor to GND for Reset Delay function
Output; ± 2.0%, 150 mA. 10 m F, ESR < 16 W
ABSOLUTE MAXIMUM RATINGS
Pin Symbol, Parameter
V IN , DC Input Voltage
V OUT , DC Voltage
Reset Output Voltage
Reset Output Current
Reset Delay Voltage
Reset Delay Current
Storage Temperature
ESD Capability, Human body Model (Note 1)
ESD Capability, Machine Model (Note 1)
Moisture Sensitivity Level
Symbol
V IN
V OUT
V RO
I RO
V D
I D
T STG
V ESDHB
V ESDMM
MSL
Min
? 42
? 0.3
? 0.3
? 5.0
? 0.3
? 2.0
? 55
4000
200
1
Max
+45
+16
25
5.0
7.0
2.0
+150
Unit
V
V
V
mA
V
mA
° C
V
V
?
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model (HBM) tested per AEC ? Q100 ? 002 (EIA/JESD22 ? A 114C)
ESD Machine Model (MM) tested per AEC ? Q100 ? 003 (EIA/JESD22 ? A 115C)
2. Latchup Current Maximum Rating: ≤ 100 mA per JEDEC standard: JESD78.
OPERATING RANGE
Pin Symbol, Parameter
Input Voltage Operating Range
Junction Temperature
Symbol
V IN
T J
Min
5.5
? 40
Max
45
150
Unit
V
° C
THERMAL RESISTANCE
Parameter
Symbol
Min
Max
Unit
Junction to Ambient (Note 3)
D 2 PAK
R q JA
?
85.4
Junction to Case (Note 3)
Junction to Ambient (Note 4)
Junction to Lead 6 (Note 4)
D 2 PAK
SOIC ? 8
SOIC ? 8
R q JC
R q JA
Y q JL6
?
?
?
6.8
138
21
° C/W
3. As mounted on a 35x35x1mm FR4 PCB with a single layer of 100 mm 2 of 1 oz copper heat spreading area.
4. As mounted on a 35x35x1mm FR4 PCB with a single layer of 100 mm 2 of 1 oz copper heat spreading area including
to the leads.
Pb SOLDERING TEMPERATURE AND MSL
traces directly connected
Parameter
Lead Temperature Soldering Reflow (SMD styles only), Pb ? Free (Note 5)
MSL, 8 ? Lead EP, LS Temperature 260 ° C
Symbol
T sld
MSL
Min
?
1
Max
265 pk
Unit
° C
?
5. This device series incorporates ESD protection and exceeds the following ratings:
Human Body Model (HBM) v 2.0 kV per JEDEC standard: JESD22–A114.
Machine Model (MM) v 200 V per JEDEC standard: JESD22–A115.
http://onsemi.com
2
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