参数资料
型号: NCV8668ABPD50R2G
厂商: ON Semiconductor
文件页数: 6/18页
文件大小: 0K
描述: IC REG LDO 5V .15A 8-SOIC-EP
标准包装: 2,500
稳压器拓扑结构: 正,固定式
输出电压: 5V
输入电压: 最高 40 V
电压 - 压降(标准): 0.3V @ 150mA
稳压器数量: 1
电流 - 输出: 150mA
电流 - 限制(最小): 205mA
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm Width)裸露焊盘
供应商设备封装: 8-SOIC-EP
包装: 带卷 (TR)
NCV8668
ELECTRICAL CHARACTERISTICS
V in = 13.2 V, C in = 0.1 m F, C out = 2.2 m F, for typical values T J = 25 ° C, for min/max values T J = ? 40 ° C to 150 ° C; unless otherwise noted.
(Notes 10 and 11)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Window Watchdog
Window Watchdog Trigger Time
(Note 14)
Fast:
Slow:
WM2 = L
WM1 = L AND WM2 = H
t WD
?
?
48
96
?
?
ms
Watchdog Deactivation Current
Threshold
3.3 V
5.0 V
Watchdog Activating Current Threshold
3.3 V
5.0 V
I out decreasing
V in > 4.5 V
V in > 5.5 V
I out increasing
V in > 4.5 V
V in > 5.5 V
I out_WD_OFF
I out_WD_ON
0.5
0.5
?
?
?
?
2
2
?
?
5
5
mA
mA
Reset Output RO
Input Voltage Reset Threshold
3.3 V
Output Voltage Reset Threshold
3.3 V
5.0 V
Reset Hysteresis
Maximum Reset Sink Current
3.3 V
5.0 V
Reset Output Low Voltage
Reset Output High Voltage
5.0 V
Reset High Level Leakage Current
3.3 V
Integrated Reset Pull Up Resistor
5.0 V
Reset Delay Time
Reset Reaction Time (See Figure 24)
V in decreasing, V out > V RT
V out decreasing
V in > 4.5 V
V in > 5.5 V
V out = 3 V, V RO = 0.25 V
V out = 4.5 V, V RO = 0.25 V
V out > 1 V, I RO < 200 m A
Fast: WM1 = L AND WM2 = L
Slow:WM1 = H OR (WM1 = L AND WM2 = H)
V in_RT
V RT
V RH
I Romax
V ROL
V ROH
I ROLK
R RO
t RD
t RR
?
90
90
?
1.3
1.75
?
4.5
?
15
12.8
25.6
16
3.8
93
93
2.0
?
?
0.15
?
?
30
16
32
25
4.2
96
96
?
?
?
0.25
?
1
50
19.2
38.4
38
V
%V out
%V out
mA
V
V
m A
k W
ms
m s
THERMAL SHUTDOWN
Thermal Shutdown Temperature
(Note 13)
Thermal Shutdown Hysteresis (Note 13)
T SD
T SH
150
?
175
25
195
?
° C
° C
10. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.
11. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T A [ T J . Low duty
cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
12. Measured when output voltage falls 100 mV below the regulated voltage at V in = 13.2 V. If V out < 5 V, then V DO = V in – V out . Maximum dro-
pout voltage value is limited by minimum input voltage V in = 4.5 V recommended for guaranteed operation at maximum output current.
13. Values based on design and/or characterization.
14. Recommended for typical trigger time. T WD = t CW + 1/2 * t OW
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