参数资料
型号: NCV8702MX30TCG
厂商: ON Semiconductor
文件页数: 2/20页
文件大小: 0K
描述: IC REG LDO 3V .2A 6XDFN
标准包装: 3,000
稳压器拓扑结构: 正,固定式
输出电压: 3V
输入电压: 最高 5.5V
电压 - 压降(标准): 0.14V @ 200mA
稳压器数量: 1
电流 - 输出: 200mA
电流 - 限制(最小): 220mA
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 6-XFDFN
供应商设备封装: 6-XDFN
包装: 带卷 (TR)
NCV8702
IN
EN
BANDGAP
REFERENCE
?
+
ENABLE
LOGIC
UVLO
INTEGRATED
SOFT ? START
THERMAL
SHUTDOWN
MOSFET
DRIVER WITH
CURRENT LIMIT
EEPROM
AUTO LOW
POWER MODE
ACTIVE
DISCHARGE
OUT
EN
GND
Figure 2. Simplified Schematic Block Diagram
Table 1. PIN FUNCTION DESCRIPTION
Pin No.
Pin No.
Pin
XDFN 6
1
2
3
4
5
6
TSOP ? 5
5
4
2
3
1
Name
OUT
N/C
GND
EN
N/C
IN
Description
Regulated output voltage pin. A small 1 m F ceramic capacitor is needed from this pin to ground
to assure stability.
Not connected. This pin can be tied to ground to improve thermal dissipation.
Power supply ground.
Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts the regulator into
shutdown mode.
Not connected. This pin can be tied to ground to improve thermal dissipation.
Input pin. It is recommended to connect a 1 m F ceramic capacitor close to the device pin.
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Input Voltage (Note 1)
Output Voltage
Enable Input
Output Short Circuit Duration
Maximum Junction Temperature
Storage Temperature
ESD Capability, Human Body Model (Note 2)
ESD Capability, Machine Model (Note 2)
Symbol
V IN
V OUT
V EN
t SC
T J(MAX)
T STG
ESD HBM
ESD MM
Value
? 0.3 V to 6 V
? 0.3 V to V IN + 0.3 V
? 0.3 V to V IN + 0.3 V
Indefinite
125
? 55 to 150
2000
200
Unit
V
V
V
s
? C
? C
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC ? Q100 ? 002 (EIA/JESD22 ? A114)
ESD Machine Model tested per AEC ? Q100 ? 003 (EIA/JESD22 ? A115)
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
http://onsemi.com
2
相关PDF资料
PDF描述
TPSB106K016R0500 CAP TANT 10UF 16V 10% 1210
IDT71V632S5PFI8 IC SRAM 2MBIT 5NS 100TQFP
NCV8702MX28TCG IC REG LDO 2.8V .2A 6XDFN
T95R106M050EZSS CAP TANT 10UF 50V 20% 2824
NCV8702MX18TCG IC REG LDO 1.8V .2A 6XDFN
相关代理商/技术参数
参数描述
NCV8702MX33TCG 功能描述:低压差稳压器 - LDO 200 MA LDO ULTRA-LOW IQ RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
NCV8702SN18T1G 功能描述:低压差稳压器 - LDO 200 MA LDO ULTRA-LOW IQ RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
NCV8702SN28T1G 功能描述:低压差稳压器 - LDO 200 MA LDO ULTRA-LOW IQ RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
NCV8702SN30T1G 功能描述:低压差稳压器 - LDO 200 MA LDO ULTRA-LOW IQ RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
NCV8702SN33T1G 功能描述:低压差稳压器 - LDO 200 MA LDO ULTRA-LOW IQ RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20