参数资料
型号: NCV87706DS50R4G
厂商: ON Semiconductor
文件页数: 5/13页
文件大小: 0K
描述: IC REG LDO 5V .35A D2PAK-5
标准包装: 800
稳压器拓扑结构: 正,固定式
输出电压: 5V
输入电压: 5.5 V ~ 40 V
电压 - 压降(标准): 0.44V @ 350mA
稳压器数量: 1
电流 - 输出: 350mA
电流 - 限制(最小): 400mA
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: TO-263-6,D²Pak(5 引线+接片),TO-263BA
供应商设备封装: D2PAK-5
包装: 带卷 (TR)
NCV8770
ELECTRICAL CHARACTERISTICS V in = 13.2 V, C in = 0.1 m F, C out = 1 m F, for typical values T J = 25 ° C, for min/max values T J =
? 40 ° C to 150 ° C; unless otherwise noted. (Notes 9 and 10)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
RESET OUTPUT RO
Output Voltage Reset Threshold
(Note 13)
(NCV8770y) where y = 1,2,3,...
(NCV8770y) where y = A,B,C,...
Reset Hysteresis
Maximum Reset Sink Current
Reset Output Low Voltage
Reset Output High Voltage
Integrated Reset Pull ? up Resistor
Reset Delay Time (Note 13)
5.0 V
5.0 V
V out decreasing, V in > 5.5 V
V out = 4.5 V, V RO = 0.25 V
V out > 1 V, I RO < 200 m A
Min Available Time, DT connected to GND
Max Available Time, DT connected to V out
V RT
V RH
I ROmax
V ROL
V ROH
R RO
t RD
90
87
?
1.75
?
4.5
15
3.2
102.4
? 20%
93
90
2.0
?
0.15
?
30
4.0
128
96
93
?
?
0.25
?
50
4.8
153.6
+20%
%V out
%V out
mA
V
V
k W
ms
Reset Reaction Time (see Figure 21)
t RR
16
25
38
m s
THERMAL SHUTDOWN
Thermal Shutdown Temperature
(Note 12)
Thermal Shutdown Hysteresis
(Note 12)
T SD
T SH
150
?
175
25
195
?
° C
° C
9. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.
10. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T A [ T J . Low duty
cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
11. Measured when output voltage falls 100 mV below the regulated voltage at V in = 13.2 V.
12. Values based on design and/or characterization.
13. See APPLICATION INFORMATION section for Reset Thresholds and Reset Delay Time Options
http://onsemi.com
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