- 您现在的位置：买卖IC网 > PDF目录21715 > NE25139-T1 (CEL)FET 900 MHZ SOT-143 PDF资料下载
参数资料
| 型号： | NE25139-T1 |
| 厂商： | CEL |
| 文件页数： | 1/7页 |
| 文件大小： | 54K |
| 描述： | FET 900 MHZ SOT-143 |
| 标准包装： | 1 |
| 晶体管类型： | MESFET 双栅极 |
| 频率： | 900MHz |
| 增益： | 20dB |
| 电压 - 测试： | 5V |
| 额定电流： | 40mA |
| 噪音数据： | 1.1dB |
| 电流 - 测试： | 10mA |
| 电压 - 额定： | 13V |
| 封装/外壳： | TO-253-4，TO-253AA |
| 供应商设备封装： | SOT-143 |
| 包装： | 剪切带 (CT) |
| 其它名称： | NE25139 NE25139-ND NE25139CT |
PART NUMBER NE25139
PACKAGE OUTLINE 39
SYMBOL PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
NF Noise Figure at VDS = 5 V, VG2S
= 1 V, I
D
= 10 mA,
f = 900 MHz dB 1.1 2.5
GPS
Power Gain at VDS = 5 V, VG2S
= 1 V, I
D = 10 mA,
f = 900 MHz dB 16 20
BVDSX
Drain to Source Breakdown Voltage at VG1S = -4 V,
VG2S
= 0, I
D = 10 μAV13
IDSS
Saturated Drain Current at VDS
= 5 V, V
G2S
= 0 V, V
G1S
= 0 V mA 5 20 40
VG1S (OFF)
Gate 1 to Source Cutoff Voltage at VDS
= 5 V,
VG2S = 0 V, ID
= 100
μA V -3.5
VG2S (OFF)
Gate 2 to Source Cutoff Voltage at VDS
= 5 V,
VG1S
= 0 V, I
D
= 100
μA V -3.5
IG1SS
Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S
= 0
μA10
IG2SS
Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0
μA10
|YFS| Forward Transfer Admittance at VDS = 5 V, VG2S
= 1 V,
ID
= 10 mA, f = 1.0 kHz mS 18 25 35
CISS
Input Capacitance at VDS = 5 V, VG2S
= 1 V, I
D
= 10 mA,
f = 1 MHz pF 0.5 1.0 1.5
CRSS
Reverse Transfer Capacitance at VDS
= 5 V, V
G2S
= 1 V,
ID
= 10 mA, f = 1 MHz pF 0.02 0.03
FEATURES
? SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
? LOW CRSS:
0.02 pF (TYP)
? HIGH GPS: 20 dB (TYP) AT 900 MHz
? LOW NF: 1.1 dB TYP AT 900 MHz
? LG1
= 1.0
μm, LG2
= 1.5
μm, WG
= 400
μm
ID = 10 mA
5
? ION IMPLANTATION
? AVAILABLE IN TAPE & REEL OR BULK
Power Gain, G
PS
(dB)
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, VDS
(V)
Noise Figure, NF (dB
)
GENERAL PURPOSE
DUAL-GATE GaAS MESFET
NE25139
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
ELECTRICAL CHARACTERISTICS
(TA = 25°C)
California Eastern Laboratories
20
0
10
0 5 10
0
10
GPS
VG2S
= 1 V
VG2S = 0.5 V
VG2S = 2 V
f = 900 MHz
NF
相关PDF资料 |
PDF描述 |
|---|---|
| 167474J63B-F | CAP FILM 0.47UF 63VDC RADIAL |
| FQI4N80TU | MOSFET N-CH 800V 3.9A I2PAK |
| NE34018-T1-64-A | AMP HJ-FET 2GHZ SOT-343 |
| NE34018-A | AMP HJ-FET 2GHZ SOT-343 |
| NE34018-64-A | AMP HJ-FET 2GHZ SOT-343 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NE25139T1U71 | 制造商:NEC 制造商全称:NEC 功能描述:GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| NE25139T1U72 | 制造商:NEC 制造商全称:NEC 功能描述:GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| NE25139-T1-U72 | 功能描述:MOSFET REORD 551-NE25139 SOT-143 DL GT MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NE25139T1U73 | 制造商:NEC 制造商全称:NEC 功能描述:GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| NE25139-T1-U73 | 功能描述:FET 900 MHZ SOT-143 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
发布紧急采购，3分钟左右您将得到回复。