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参数资料
| 型号： | NE33353B |
| 元件分类： | 开关 |
| 英文描述： | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件页数： | 6/7页 |
| 文件大小： | 525K |
| 代理商： | NE33353B |
APEM
www.apem.com
A-83
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Positions and connections
A
FUNCTION
12146
12147
12148
12149
12148CT
12145
12144
12144-1R
12144-2R
12156
12166
12164
TERMINAL
IDENTIFICATION
WIRING FOR 3-WAY SWITCHES
(FUNCTION 4)
LEVER POSITION AND CONNECTIONS
I
II
III (Flat)
ON
-
ON
(1-3)-4
(1-3)-2
(5-7)-8
(5-7)-6
MOM
OFF
MOM
ON
OFF
MOM
ON
OFF
ON
MOM
OFF
ON
1-2
1-3
4-5
4-6
-
ON
MOM
1-2
1-3
4-5
4-6
ON
MOM
ON
MOM
ON
MOM
1-2
1-3
4-5
4-6
ON
-
ON
(1-3)-4
(1-3)-2
(5-7)-8
(5-7)-6
(9-11)-12
(9-11)-10
ON
-
ON
1A - 3A
1A - 2A
1C - 3C
1C - 2C
1E - 3E
1E - 2E
1G - 3G
1G - 2G
ON
1A - 2A
1A - 3A
1C - 2C
1C - 3C
1E - 2E
1E - 3E
1G - 2G
1G - 3G
External jumper (added by customer)
12164
12144
12144-1R
12144-2R
Flat
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
CE
G
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
CE
G
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
CE
G
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
CE
G
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
1
4
3
2
6
5
4
1
3
2
6
5
4
1
3
2
6
5
1A
2A
1C
1E
1G
3A
2C
3C
2E
3E
2G
3G
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE33353E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 14V V(BR)CEO | 200MA I(C) | FO-53VAR |
| NE33387 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 14V V(BR)CEO | 200MA I(C) | FO-102VAR |
| NE334S01 | 功能描述:射频GaAs晶体管 Low Noise HJ FET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE334S01_00 | 制造商:NEC 制造商全称:NEC 功能描述:C BAND SUPER LOW NOISE HJ FET |
| NE334S01-A | 功能描述:MOSFET Low Noise HJ FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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