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参数资料
| 型号： | NE3503M04-T2-A |
| 厂商： | CEL |
| 文件页数： | 1/8页 |
| 文件大小： | 282K |
| 描述： | AMP HJ-FET 12GHZ SOT-343 |
| 标准包装： | 3,000 |
| 晶体管类型： | HFET |
| 频率： | 12GHz |
| 增益： | 12dB |
| 电压 - 测试： | 2V |
| 额定电流： | 70mA |
| 噪音数据： | 0.45dB |
| 电流 - 测试： | 10mA |
| 电压 - 额定： | 4V |
| 封装/外壳： | SC-82A，SOT-343 |
| 供应商设备封装： | SOT-343 |
| 包装： | 带卷 (TR) |
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3503M04
C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10456EJ03V0DS (3rd edition)
Date Published January 2009 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an
"<R>" in the PDF file and specifying it in the "Find what:" field.
FEATURES
?
Super low noise figure and
high associated gain
NF = 0.45 dB TYP., Ga
= 12.0
dB TYP. @
VDS
= 2 V, ID
= 10 mA,
f = 12 GHz
?
Flat-lead 4-pin thin-type super minimold (M04) package
?
Gate width: Wg
= 160
?m
APPLICATIONS
?
DBS LNB gain-stage, Mix-stage
?
Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3503M04
NE3503M04-A
Flat-lead 4-pin thin-
type super minimold
(M04)
(Pb-Free)
50 pcs (Non reel)
V75
? 8 mm wide embossed taping
? Pin 1
(Source), Pin 2 (Drain) face
the perforation side of the tape
NE3503M04-T2
NE3503M04-T2-A
3 kpcs/reel
NE3503M04-T2B
NE3503M04-T2B-A
15 kpcs/reel
Remark
To order evaluation samples, contact your nearby salesoffice.
Part number for sample order: NE3503M04-A
ABSOLUTE MAXIMUM RATINGS (TA
= +25?C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
?3.0
V
Drain
Current
ID
IDSS
mA
Gate
Current
IG
80
?A
Total Power Dissipation
Ptot
125
mW
Channel
Temperature
Tch
+125
?C
Storage Temperature
Tstg
?65 to +125
?C
<R>
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE3503M04-T2B-A | 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR HFET |
| NE3505M04-A | 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR HFET |
| NE3508M04 | 制造商:CEL 制造商全称:CEL 功能描述:HETERO JUNCTION FIELD EFFECT TRANSISITOR |
| NE3508M04-A | 功能描述:射频GaAs晶体管 L to S Band Lo Noise Amplifier N-Ch HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3508M04-EVNF23 | 功能描述:射频GaAs晶体管 SPR LW Noise Pseudo HJ FET EVAL Fixt RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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