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参数资料
| 型号： | NE3509M04-T2 |
| 元件分类： | 开关 |
| 英文描述： | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件页数： | 4/7页 |
| 文件大小： | 525K |
| 代理商： | NE3509M04-T2 |
APEM
www.apem.com
A-81
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Fully sealed - matt black
A
Solder lug terminals - four pole
Solder lug terminals - three pole
Solder lug terminals - double pole
MODEL
STRUCTURE
Function 6
Other functions
I
II
III
12146 X778
ON
-
ON
12149 X778
ON
OFF
ON
12147 X778
MOM OFF MOM
12148 X778
ON
OFF MOM
12144 X778
ON
12144-1R X778
MOM ON
ON
12144-2R X778
MOM ON MOM
12145 X778
ON MOM
I
II
III
12156 X778
ON
-
ON
12159 X778
ON
OFF
ON
12157 X778
MOM OFF MOM
12158 X778
ON
OFF MOM
I
II
III
12166 X778
ON
-
ON
12169 X778
ON
OFF
ON
12167 X778
MOM OFF MOM
12168 X778
ON
OFF MOM
12164 X778
ON
12164-1R X778
ON
ON MOM
12164-2R X778
MOM ON MOM
Shown with standard lever
Flat
43
2
3
1
2
- 1
(.098)
(.047)
(.
0
6
)
1
.7
0
1.20
2.50
(.
1
6
1
)
4
.1
0
(.039)
1.00
(.
3
8
)
8
.6
0
(.681)
(.409)
(.594)
(.161)
(.
0
1
9
)
(.
6
2
9
)
(.629)
(.
2
3
6
)
(.
0
9
8
)
A
(15/32-32UNS)
EPOXY
(.
1
5
7
)
I
II
III
15.10
4.10
17.30
10.40
16.00
11.90-32UNS
4
.0
0
.5
0
1
6
.0
0
2
.5
0
6
.0
0
6
.0
0
(.
2
3
6
D
IA
)
(.059)
1.50
0
.5
0
10.40
17.30
4.10
15.10
III
II
I
A
(.
0
1
9
)
(.161)
(.594)
(.409)
(.681)
6
.0
0
2
.5
0
(.
0
9
8
)
(.
2
3
6
)
1
6
.0
0
(.
6
2
9
)
(.
1
5
7
)
4
.0
0
EPOXY
6
.0
0
(.
2
3
6
D
IA
)
11.90-32UNS
(15/32-32UNS)
(.866)
22.00
1.50
(.059)
0
.5
0
10.40
17.30
4.10
15.10
III
II
I
A
(.
0
1
9
)
(.161)
(.594)
(.409)
(.681)
4
.0
0
(.
1
5
7
)
(.
2
3
6
)
(.
0
9
8
)
2
.5
0
6
.0
0
(.
2
3
6
D
IA
)
6
.0
0
(15/32-32UNS)
11.90-32UNS
(.
6
2
9
)
1
6
.0
0
(1.106)
28.10
(.059)
1.50
EPOXY
Function 6
Typical angle of throw (A)
24°
Functions 9, 7, 8, 4
20°
Function 5
12°
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE3509M04-T2-A | 功能描述:射频GaAs晶体管 L to S Band Lo Noise Amplifier N-Ch HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3509M14 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier |
| NE3510M04 | 制造商:NEC 制造商全称:NEC 功能描述:L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3510M04-A | 功能描述:射频GaAs晶体管 L-S Band Lo No Amp RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3510M04-T2 | 制造商:CEL 制造商全称:CEL 功能描述:HETERO JUNCTION FIELD EFFECT TRANSISTOR |
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