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参数资料
| 型号： | NE3514S02-T1D-A |
| 元件分类： | 开关 |
| 英文描述： | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件页数： | 3/7页 |
| 文件大小： | 525K |
| 代理商： | NE3514S02-T1D-A |
A-80
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Overview
A
12
SERIES
Terminals and bushings
1
Solder lug terminals,
threaded bushing
11,9 (15/32)
2
Straight PC terminals,
threaded bushing
11,9 (15/32)
Number of poles
4
Double pole
5
Three pole
6
Four pole
Electrical functions
6
ON
-
ON
9
ON
OFF
ON
7
MOM OFF
MOM
8
ON
OFF
MOM
4
ON
ON MOM
MOM ON MOM
5
ON
MOM
Function 4
. For 2 and 4 poles only.
. Must not have blank in
"momentary" box.
Momentary
1R
ON ON MOM
2R
MOM ON MOM
. For function 4 only.
. Leave blank for other
functions.
ABOUT THIS SERIES
On the following pages, you will find successively :
- model structure of switches
- options in the same order as in above chart
Dimensions
: first dimensions are in mm while inches are shown as bracketted numbers.
Fluorescent tip
Blank
None
0.38
White fluorescent
tip to lever
X778
High performance
fully sealed
matt black switches.
Levers
Blank
Standard lever
-12
Short lever
Locking levers
1V
1 locked position
2V
2 locked positions
3V
3 locked positions
Approval
CECC
Availability :
Consult factory for
details of approved
models.
Sealing boots
can be used to further protect the switches against dust and water. They are presented in section H.
Mounting accessories
: standard hardware supplied with all models : 1 hex nut 14 mm (.551) across flats, part number U41.
This nut is presented after model structure of switches.
Security caps
are available to prevent inadvertent lever operation. They are presented in section I.
Packaging unit
: 2 pole models : 25 pieces
3 and 4 pole models : 20 pieces
.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE3515S02-A | 功能描述:射频GaAs晶体管 X to Ku-BAND SUPER LOW NOISE AMP N-CH RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3515S02-T1C-A | 功能描述:射频GaAs晶体管 Super Low Noise Pseudomorphic RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3515S02-T1D-A | 功能描述:射频GaAs晶体管 Super Low Noise Pseudomorphic RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3516S02 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain |
| NE3516S02-A | 制造商:California Eastern Laboratories (CEL) 功能描述:SUPER LOW NOISE PSEUDOMORPHIC HJ FET, ROHS COMPLIANT - Product that comes on tape, but is not reeled 制造商:California Eastern Laboratories (CEL) 功能描述:IC HJ-FET RF N-CH S02 4-MICROX |
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