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参数资料
| 型号： | NE5520279A-EVPW09 |
| 厂商： | CEL |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD NE5520279A 900MHZ |
| 标准包装： | 1 |
| 类型： | MOSFET |
| 频率： | 900MHz |
| 适用于相关产品： | NE5520279A@900MHz |
| 已供物品： | 板 |
NE5520279A
ABSOLUTE MAXIMUM RATINGS (T A = +25 ? C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
V DS
V GS
I D
Ratings
15.0
5.0
0.6
Unit
V
V
A
Drain Current (Pulse Test)
I D
Note
1.2
A
Total Power Dissipation
Channel Temperature
Storage Temperature
P tot
T ch
T stg
12.5
125
? 55 to +125
W
? C
? C
Note Duty Cycle 50%, T on ? 1 s
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
V DS
V GS
I D
P in
Test Conditions
Duty Cycle 50%, T on ? 1 s
f = 1.8 GHz, V DS = 3.2 V
MIN.
2.8
0
?
24
TYP.
3.0
2.0
800
25
MAX.
6.0
3.0
1 000
30
Unit
V
V
mA
dBm
ELECTRICAL CHARACTERISTICS
(T A = +25 ? C, unless otherwise specified, using NEC standard test fixture)
Parameter
Gate to Source Leak Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Thermal Resistance
Transconductance
Drain to Source Breakdown Voltage
Output Power
Drain Current
Power Added Efficiency
Symbol
I GSS
I DSS
V th
R th
G m
BV DSS
P out
I D
? add
Test Conditions
V GS = 5.0 V
V DS = 6.0 V
V DS = 3.5 V, I D = 1 mA
Channel to Case
V DS = 3.2 V, I D = 700 mA
I DSS = 10 ? A
f = 1.8 GHz, V DS = 3.2 V,
P in = 25 dBm,
I Dset = 700 mA (RF OFF), Note1
MIN.
?
?
1.0
?
?
15
30.5
?
40
TYP.
?
?
1.4
?
1.3
18
32.0
800
45
MAX.
100
100
1.9
8
?
?
?
?
?
Unit
nA
nA
V
? C/W
S
V
dBm
mA
%
Linear Gain
Note2
G L
?
10
?
dB
Notes 1. DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2. P in = 5 dBm
2
Data Sheet PU10123EJ03V0DS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE5520279A-EVPW24 | 功能描述:射频开发工具 For NE5520279A-A Power at 2.4 GHz RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| NE5520279A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 15V 0.6A 4-Pin Case 79A T/R |
| NE5520279A-T1-A | 功能描述:射频MOSFET电源晶体管 L/S Band Med Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| NE5520379A | 功能描述:射频MOSFET电源晶体管 L&S Band LD-MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| NE5520379A-A | 功能描述:射频MOSFET电源晶体管 L&S Band LD-MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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