参数资料
型号: NE5532ANG
厂商: ON Semiconductor
文件页数: 4/10页
文件大小: 0K
描述: IC OPAMP DUAL LOW NOISE 8-DIP
标准包装: 50
放大器类型: 通用
电路数: 2
转换速率: 9 V/µs
增益带宽积: 10MHz
电流 - 输入偏压: 200nA
电压 - 输入偏移: 500µV
电流 - 电源: 8mA
电流 - 输出 / 通道: 38mA
电压 - 电源,单路/双路(±): ±3 V ~ 20 V
工作温度: 0°C ~ 70°C
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
产品目录页面: 1131 (CN2011-ZH PDF)
其它名称: NE5532ANG-ND
NE5532ANGOS
NE5532, SA5532, SE5532, NE5532A, SE5532A
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS (Tamb = 25°C; VS = "15 V, unless otherwise noted.) (Notes 2, 3 and 4)
Characteristic
Symbol
Test Conditions
SE5532/A
NE5532/A, SA5532
Unit
Min
Typ
Max
Min
Typ
Max
Offset Voltage
VOS
0.5
2.0
0.5
4.0
mV
Overtemperature
3.0
5.0
mV
DVOS/DT
5.0
5.0
mV/°C
Offset Current
IOS
100
10
150
nA
Overtemperature
200
200
nA
DIOS/DT
200
200
pA/°C
Input Current
IB
300
500
300
800
nA
Overtemperature
700
1000
nA
DIB/DT
5.0
5.0
nA/°C
Supply Current
ICC
8.0
10.5
8.0
16
mA
Overtemperature
13
Common-Mode Input Range
VCM
"12
"13
"12
"13
V
Common-Mode Rejection Ratio
CMRR
80
100
70
100
dB
Power Supply Rejection Ratio
PSRR
10
50
10
100
mV/V
Large-Signal Voltage Gain
AVOL
RL w 2.0 kW; VO = "10 V
50
100
25
100
V/mV
Overtemperature
25
15
RL w 600 W; VO = "10 V
40
50
15
50
Overtemperature
20
10
Output Swing
VOUT
RL w 600 W
"12
"13
"12
"13
V
Overtemperature
"10
"12
"10
"12
RL w 600 W; VS = "18 V
"15
"16
"15
"16
Overtemperature
"12
"14
"12
"14
RL w 2.0 kW
"13
"13.5
"13
"13.5
Overtemperature
"12
"12.5
"10
"12.5
Input Resistance
RIN
30
300
30
300
kW
Output Short Circuit Current
ISC
10
38
60
10
38
60
mA
2. Diodes protect the inputs against overvoltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential input
voltage exceeds 0.6 V. Maximum current should be limited to "10 mA.
3. For operation at elevated temperature, derate packages based on the package thermal resistance.
4. Output may be shorted to ground at VS = "15 V, Tamb = 25°C. Temperature and/or supply voltages must be limited to ensure dissipation rating
is not exceeded.
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