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参数资料
| 型号： | NIS5132MN2TXG |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/11页 |
| 文件大小： | 258K |
| 描述： | IC ELECTRONIC FUSE 12V 10DFN |
| 标准包装： | 3,000 |
| 功能： | 电子保险丝 |
| 输入电压： | 9 V ~ 18 V |
| 电流 - 输出： | 3.6A |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-VFDFN 裸露焊盘 |
| 供应商设备封装： | 10-DFN（3x3） |
| 包装： | 带卷 (TR) |
NIS5132 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (Unless otherwise noted: V
CC
= 12 V, C
L
= 100 mF, dv/dt pin open, R
LIMIT
= 10 W, T
j
= 25癈
unless otherwise noted.)
Characteristics
Symbol
Min
Typ
Max
Unit
POWER FET
Delay Time (enabling of chip to I
D
= 100 mA with 1 A resistive load)
T
dly
220
ms
Kelvin ON Resistance (Note 4)
T
J
= 140癈 (Note 5)
R
DSon
35
44
62
55
mW
Off State Output Voltage
(V
CC
= 18 V
dc
, V
GS
= 0 V
dc
, R
L
= R)
V
off
190
300
mV
Output Capacitance (V
DS
= 12 V
dc
, V
GS
= 0 V
dc
, f = 1 MHz)
250
pF
Continuous Current (T
A
= 25癈, 0.5 in
2
pad) (Note 5)
(T
A
= 80癈, minimum copper)
I
D
I
D
3.6
1.7
A
THERMAL LATCH
Shutdown Temperature (Note 5)
T
SD
150
175
200
癈
Thermal Hysteresis (Decrease in die temperature for turn on, does not apply
to latching parts)
T
Hyst
45
癈
UNDER/OVERVOLTAGE PROTECTION
Output Clamping Voltage (Overvoltage Protection) (V
CC
= 18 V) (Note 6)
V
Clamp
14
15
16.2
V
Undervoltage Lockout (Turn on, voltage going high)
V
UVLO
7.7
8.5
9.3
V
UVLO Hysteresis
V
Hyst
0.80
V
CURRENT LIMIT
Kelvin Short Circuit Current Limit (R
Limit
= 15.4 W, Note 7)
I
LimSS
2.75
3.44
4.25
A
Kelvin Overload Current Limit (R
Limit
= 15.4 W, Note 7)
I
LimOL
4.6
A
dv/dt CIRCUIT
Output Voltage Ramp Time (Enable to V
OUT
= 11.7 V)
t
slew
0.5
0.9
1.8
ms
Maximum Capacitor Voltage
V
max
V
CC
V
ENABLE/FAULT
Logic Level Low (Output Disabled)
V
inlow
0.35
0.58
0.81
V
Logic Level Mid (Thermal Fault, Output Disabled)
V
inmid
0.82
1.4
1.95
V
Logic Level High (Output Enabled)
V
inhigh
1.96
2.64
3.30
V
High State Maximum Voltage
V
inmax
3.40
4.30
5.2
V
Logic Low Sink Current (V
enable
= 0 V)
I
inlow
17
25
mA
Logic High Leakage Current for External Switch (V
enable
= 3.3 V)
I
inleak
1.0
mA
Maximum Fanout for Fault Signal (Total number of chips that can be
connected to this pin for simultaneous shutdown)
Fan
3.0
Units
TOTAL DEVICE
Bias Current (Operational)
I
Bias
1. 8
2.5
mA
Bias Current (Shutdown)
I
Bias
1.0
mA
Minimum Operating Voltage (Notes 5 and 8)
V
min
7.6
V
4. Pulse test: Pulse width 300 us, duty cycle 2%.
5. Verified by design.
6. V
Clamp
only in MN1 & MN2 versions.
7. Refer to explanation of short circuit and overload conditions in application note AND8140.
8. Device will shut down prior to reaching this level based on actual UVLO trip point.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NIS5132MN3TXG | 功能描述:其他电源管理 RoHS:否 制造商:Texas Instruments 输出电压范围: 输出电流:4 mA 输入电压范围:3 V to 3.6 V 输入电流: 功率耗散: 工作温度范围:- 40 C to + 110 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-48 封装:Reel |
| NIS5135 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:+5 Volt Electronic Fuse |
| NIS5135MN1TXG | 功能描述:热插拔功率分布 5.0V Electronic Fuse RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| NIS5135MN2TXG | 功能描述:热插拔功率分布 5.0V Electronic Fuse RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| NIS5232MN1TXG | 制造商:ON Semiconductor 功能描述:Electronic Fuse 10-Pin DFN EP T/R 制造商:ON Semiconductor 功能描述:NIS5232MN1TXG 8A E-FUSE L - Tape and Reel |
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