参数资料
型号: NJ903
厂商: InterFET Corporation
英文描述: Silicon Junction Field-Effect Transistor
中文描述: 硅结场效应晶体管
文件页数: 1/2页
文件大小: 130K
代理商: NJ903
F-40
01/99
NJ903 Process
Silicon Junction Field-Effect Transistor
Analog Switch
Digital Switch
Low-Noise Amplifier
Absolute maximum ratings at TA = 25C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ903 Process.
Datasheet
IFN5432
IFN5433
IFN5434
At 25°C free air temperature:
NJ903 Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 25
– 40
V
IG = – 1 A, VDS = V
Reverse Gate Leakage Current
IGSS
– 0.1
– 1
nA
VGS = – 15V, VDS = V
Drain Saturation Current (Pulsed)
IDSS
100
900
mA
VDS = 10V, VGS = V
Gate Source Cutoff Voltage
VGS(OFF)
– 2
– 7
V
VDS = 10V, ID = 1 nA
Dynamic Electrical Characteristics
Drain Source ON Resistance
rds(on)
5
ID = 1 mA, VGS =
f = 1 kHz
Input Capacitance
Ciss
45
pF
VDS = V, VGS = – 10V
f = 1 MHz
Feedback Capacitance
Ciss
22
pF
VDS = V, VGS = – 10V
f = 1 MHz
Turn On Delay Time
td(on)
7ns
Rise Time
tr
1ns
VDD = 1.5V, ID(ON) = 30 mA
Turn Off Delay Time
td(off)
12
ns
RL = 50 , VGS(ON) = V
Fall Time
tf
2ns
VGS(OFF) = – 7V
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
G
S-D
D-S
S-D
D-S
Die Size = 0.040" X 0.040"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Databook.fxp
1/13/99 2:09 PM
Page F-40
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