参数资料
型号: NL27WH04DTT3
厂商: ON SEMICONDUCTOR
元件分类: 门电路
英文描述: DUAL 1-INPUT INVERT GATE, PDSO6
封装: SC-59, SOT-23, TSOP-6
文件页数: 6/12页
文件大小: 120K
代理商: NL27WH04DTT3
NL27WH04
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
VCC
TA = 25°C
TA ≤ 85°C
TA ≤ 125°C
Symbol
Parameter
Test Conditions
(V)
Min
Typ
Max
Min
Max
Min
Max
Unit
VIH
Minimum High–Level
Input Voltage
2.0
3.0
4.5
5.5
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
V
VIL
Maximum Low–Level
Input Voltage
2.0
3.0
4.5
5.5
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
V
VOH
Minimum High–Level
Output Voltage
VIN = VIH or VIL
IOH = –50A
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
IN
IH
IL
VIN = VIH or VIL
IOH = –4mA
IOH = –8mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
VOL
Maximum Low–Level
Output Voltage
VIN = VIH or VIL
IOL = 50A
2.0
3.0
4.5
0.0
0.1
V
IN
IH
IL
VIN = VIH or VIL
IOL = 4mA
IOL = 8mA
3.0
4.5
0.36
0.44
0.52
V
IIN
Maximum Input
Leakage Current
VIN = 5.5V or GND
0 to
5.5
±0.1
±1.0
A
ICC
Maximum Quiescent
Supply Current
VIN = VCC or GND
5.5
2.0
20
40
A
AC ELECTRICAL CHARACTERISTICS (Cload = 50 pF, Input tr = tf = 3.0ns)
TA = 25°C
TA ≤ 85°C
TA ≤ 125°C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Min
Max
Min
Max
Unit
tPLH,
tPHL
Maximum
Propogation Delay,
I
tAt Y
VCC = 3.0 ± 0.3V
CL = 15 pF
CL = 50 pF
4.5
6.4
7.1
10.6
8.5
12.0
10.0
14.5
ns
gy
Input A to Y
VCC = 5.0 ± 0.5V
CL = 15 pF
CL = 50 pF
3.5
4.5
5.5
7.5
6.5
8.5
8.0
10.0
CIN
Maximum Input
Capacitance
4
10
10
10
pF
Typical @ 25
°C, VCC = 5.0V
CPD
Power Dissipation Capacitance (Note 1.)
8.0
pF
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no–load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
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