参数资料
| 型号： | NLAS323US |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/10页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH DUAL SPST US8 |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 1 |
| 功能： | 开关 |
| 电路： | 2 x SPST - NO |
| 导通状态电阻： | 30 欧姆 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 2.2 V ~ 5.5 V |
| 电流 - 电源： | 1µA |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VFSOP（0.091"，2.30mm 宽） |
| 供应商设备封装： | US8 |
| 包装： | 剪切带 (CT) |
| 其它名称： | NLAS323USOSCT |
NLAS323
http://onsemi.com
4
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
VCC
Limit
Symbol
Parameter
Condition
V
25
°C
Unit
BW
Maximum OnChannel 3dB Bandwidth
VIS = 0 dBm
3.0
190
MHz
BW
Maximum OnChannel 3dB Bandwidth
or Minimum Frequency Response
VIS = 0 dBm
VIS centered between VCC and GND
3.0
4.5
190
200
MHz
or Minimum Frequency Res onse
VIS centered between VCC and GND
4.5
5.5
200
220
VONL
Maximum Feedthrough On Loss
VIS = 0 dBm @ 10 kHz
3.0
2
dB
VONL
Maximum Feedthrough On Loss
VIS = 0 dBm @ 10 kHz
VIS centered between VCC and GND
3.0
4.5
2
dB
VIS centered between VCC and GND
(Figure 6)
4.5
5.5
2
VISO
OffChannel Isolation
f = 100 kHz; VIS = 1.0 V RMS
3.0
93
dB
VISO
OffChannel Isolation
f = 100 kHz VIS = 1.0 V RMS
VIS centered between VCC and GND
3.0
4.5
93
dB
VIS centered between VCC and GND
4.5
5.5
Q
Charge Injection
VIS = VCC to GND, FIS = 20 kHz
3.0
1.5
Q
Charge Injection
Enable Input to Common I/O
VIS = VCC to GND, FIS = 20 kHz
tr = tf = 3.0 ns
3.0
5.5
1.5
3.0
pC
Enable In ut to Common I/O
tr
tf
3.0 ns
RIS = 0 W, CL = 1000 pF
QC *
DV
5.5
3.0
C
IS
L
Q = CL * DVOUT
THD
Total Harmonic Distortion
FIS = 20 Hz to 1 MHz, RL = Rgen = 600 W, CL = 50 pF
3.3
0.3
%
THD
Total Harmonic Distortion
THD + Noise
FIS = 20 Hz to 1 MHz, RL = Rgen = 600 W, CL = 50 F
VIS = 3.0 VPP sine wave
3.3
5.5
0.3
0.15
%
THD + Noise
VIS
3.0 VPP sine wave
VIS = 5.0 VPP sine wave
(Fi
5.5
0.15
IS
PP
(Figure 17)
55
1.00E+03
5
1.00E01
15
35
LEAKAGE
(pA)
1.00E04
Figure 3. Switch Leakage vs. Temperature
1.00E+05
INO(OFF)
TEMPERATURE (
°C)
1.00E03
1.00E02
1.00E+00
1.00E+02
1.00E+04
25
45
1.00E05
1.00E06
1.00E07
1.00E+01
65
85
105 125 145
ICOM(ON)
ICOM(OFF)
相关PDF资料 |
PDF描述 |
|---|---|
| NLAS324US | IC SWITCH DUAL SPST US8 |
| NLAS325US | IC SWITCH DUAL SPST US8 |
| NLAS3699BMN1R2G | IC SWITCH DUAL DPDT 16QFN |
| NLAS3699MN1R2G | IC SWITCH DUAL DPDT 16QFN |
| NLAS3799BMNR2G | IC SWITCH DUAL DPDT 16WQFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NLAS323USG | 功能描述:模拟开关 IC 2-6V Dual SPST Sw. -55 to 125deg C RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
| NLAS324 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual SPST Analog Switch, Low Voltage, Single Supply |
| NLAS324_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual SPST Analog Switch, Low Voltage, Single Supply |
| NLAS324US | 功能描述:模拟开关 IC 2-6V Dual SPST Sw. RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
| NLAS324USG | 功能描述:模拟开关 IC 2-6V Dual SPST Sw. -55 to 125deg C RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
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