参数资料
型号: NLAS323USG
厂商: ON Semiconductor
文件页数: 3/10页
文件大小: 0K
描述: IC SWITCH DUAL SPST US8
标准包装: 1
功能: 开关
电路: 2 x SPST - NO
导通状态电阻: 30 欧姆
电压电源: 单电源
电压 - 电源,单路/双路(±): 2.2 V ~ 5.5 V
电流 - 电源: 1µA
工作温度: -55°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-VFSOP(0.091",2.30mm 宽)
供应商设备封装: US8
包装: 标准包装
产品目录页面: 1131 (CN2011-ZH PDF)
其它名称: NLAS323USGOSDKR
NLAS323
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
*0.5 to )7.0
V
VI
DC Input Voltage
*0.5 to )7.0
V
VO
DC Output Voltage
*0.5 to )7.0
V
IIK
DC Input Diode Current
VI < GND
*50
mA
IOK
DC Output Diode Current
VO < GND
*50
mA
IO
DC Output Sink Current
$50
mA
ICC
DC Supply Current per Supply Pin
$100
mA
IGND
DC Ground Current per Ground Pin
$100
mA
TSTG
Storage Temperature Range
*65 to )150
°C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
TJ
Junction Temperature under Bias
)150
°C
qJA
Thermal Resistance
(Note 1)
250
°C/W
PD
Power Dissipation in Still Air at 85
°C
250
mW
MSL
Moisture Sensitivity
Level 1
FR
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
VESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 150
N/A
V
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
indicated may adversely affect device reliability. Functional operation under absolute maximumrated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow.
2. Tested to EIA/JESD22A114A.
3. Tested to EIA/JESD22A115A.
4. Tested to JESD22C101A.
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
Positive DC Supply Voltage
2.0
5.5
V
VIN
Digital Input Voltage (Enable)
GND
5.5
V
VIO
Static or Dynamic Voltage Across an Off Switch
GND
VCC
V
VIS
Analog Input Voltage (NO, COM)
GND
VCC
V
TA
Operating Temperature Range, All Package Types
55
+125
°C
tr, tf
Input Rise or Fall Time,
Vcc = 3.3 V + 0.3 V
(Enable Input)
Vcc = 5.0 V + 0.5 V
0
100
20
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS TIME
TO 0.1% BOND FAILURES
Junction
Temperature
5C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
NORMALIZED
F
AILURE
RA
TE
1
10
100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 2. Failure Rate vs. Time Junction Temperature
TIME, YEARS
T
J=
1
3
0
°C
T
J=
1
2
0
°C
T
J=
1
0
°C
T
J=
1
0
°C
T
J=
9
0
°C
T
J=
8
0
°C
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