参数资料
| 型号： | NLAS3899BMNTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH DUAL DPDT 16WQFN |
| 标准包装： | 3,000 |
| 功能： | 开关 |
| 电路： | 2 x DPDT |
| 导通状态电阻： | 2.2 欧姆 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 1.65 V ~ 4.5 V |
| 电流 - 电源： | 1µA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-WFQFN 裸露焊盘 |
| 供应商设备封装： | 16-WQFN（1.8x2.6） |
| 包装： | 带卷 (TR) |
Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 1
1
Publication Order Number:
NLAS3899B/D
NLAS3899B
Dual DPDT Low RON, Low
Capacitance Switch
The NLAS3899B is a dual DPDT analog switch designed for low
power audio and dual SIM card applications. The low RON of 3.0 W
(typical) is ideal for routing audio signals to or from a moderately high
impedance load. In addition, the low CON of 20 pF (typical) gives the
NLAS3899B a high bandwidth of 280 MHz, perfect for dual SIM card
applications.
Features
Single Supply Operation
1.65 to 4.3 V VCC
Function Directly from LiIon Battery
Low ON Resistance (3.0 W Typical Across VCC)
Low CON (20 pF Typical)
Bandwidth 280 MHz
Maximum Breakdown Voltage: 5.5 V
Low Static Power
Interfaces with 1.8 V Chipset
These are PbFree Devices
Typical Applications
Cell Phone Speaker/Microphone Switching
RingtoneChip/Amplifier Switching
Dual SIM Card Data Switching
Four Unbalanced (SingleEnded) Switches
Important Information
ESD Protection:
Human Body Model (HBM) 1000 V All Pins
Human Body Model (HBM) 5000 V I/O to GND
Continuous Current Rating Through each Switch ±300 mA
Conforms to: JEDEC MO220, Issue H, Variation VEED6
Package:
1.8 x 2.6 x 0.75 mm WQFN16 PbFree
3.0 x 3.0 x 0.9 mm QFN16 PbFree
WQFN16
CASE 488AP
MARKING
DIAGRAMS
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
16
AAMG
G
1
http://onsemi.com
4
1
16
13
9
12
58
14
7
15
6
310
211
COMA NOA Vcc NCD
NCB GND NOCCOMC
NCC
CD IN
NOD
COMD
COMB
NOB
AB IN
NCA
1
QFN16
CASE 485AE
(Note: Microdot may be in either location)
1
16
NLAS
3899
ALYW
1
XX
= Specific Device Code
A
= Assembly Location
M
= Date Code/Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= PbFree Package
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NLAS3899BMNTWG | 制造商:ON Semiconductor 功能描述:DUAL DPDT LOW RON LOW CA - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / DUAL DPDT LOW RON LOW CA |
| NLAS3899BMNTXG | 功能描述:模拟开关 IC DUAL LOW RON SWITCH DPDT RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
| NLAS4051 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Analog Multiplexer/ Demultiplexer TTL Compatible, Single-Pole, 8-Position Plus Common Off |
| NLAS4051/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog Multiplexer/Demultiplexer |
| NLAS4051D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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