参数资料
型号: NLAS4783MN1R2G
厂商: ON Semiconductor
文件页数: 8/11页
文件大小: 0K
描述: IC SWITCH TRIPLE SPDT 16QFN
标准包装: 1
功能: 开关
电路: 3 x SPDT
导通状态电阻: 1.2 欧姆
电压电源: 单电源
电压 - 电源,单路/双路(±): 1.65 V ~ 3.6 V
电流 - 电源: 2µA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-VFQFN 裸露焊盘
供应商设备封装: 16-QFN(3x3)
包装: 剪切带 (CT)
其它名称: NLAS4783MN1R2GOSCT
NLAS4783
http://onsemi.com
6
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
Test Conditions
VCC
(V)
VIS
(V)
Guaranteed Maximum Limit
Unit
*405C to 255C
t855C
Min
Typ*
Max Min
Max
tON
TurnOn Time
RL = 50 W, CL = 35 pF
(Figures 3 and 4)
2.3 3.6
1.5
25
27
ns
tOFF
TurnOff Time
RL = 50 W, CL = 35 pF
(Figures 3 and 4)
2.3 3.6
1.5
15
20
ns
tBBM
Minimum BreakBeforeMake Time
VIS = 3.0
RL = 300 W, CL = 35 pF
(Figure 2)
3.0
1.5
2.0
8.0
ns
Typical @ 25, VCC = 3.6 V
CIN
Control Pin Input Capacitance
2.5
pF
CSN
SN Port Capacitance
75
pF
CD
D Port Capacitance When Switch is Enabled
240
pF
*Typical Characteristics are at 25°C.
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
Parameter
Condition
VCC
(V)
255C
Unit
Typical
BW
Maximum OnChannel 3dB
Bandwidth or Minimum Frequency
Response
VIN centered between VCC and GND
(Figure 5)
1.65 3.6
17
MHz
VONL
Maximum Feedthrough On Loss
VIN = 0 dBm @ 100 kHz to 50 MHz
VIN centered between VCC and GND (Figure 5)
1.65 3.6
0.10
dB
VISO
OffChannel Isolation
f = 100 kHz; VIS = 1 V RMS; CL = 5 nF
VIN centered between VCC and GND(Figure 5) (Note 6)
1.65 3.6
62
dB
Q
Charge Injection Select Input to
Common I/O
VIN = VCC to GND, RIS = 0 W, CL = 1 nF
Q = CL x DVOUT (Figure 6)
1.65 3.6
50
pC
THD
Total Harmonic Distortion THD +
Noise
FIS = 20 Hz to 20 kHz, RL = Rgen = 600 W, CL = 50 pF
VIS = 2 V RMS
3.0
0.015
%
VCT
ChanneltoChannel Crosstalk
f = 100 kHz; VIS = 1 V RMS, CL = 5 pF, RL = 50 W
VIN centered between VCC and GND (Figure 5)
1.65 3.6
62
dB
6. OffChannel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch.
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