参数资料
型号: NLAS52231MUR2G
厂商: ON Semiconductor
文件页数: 3/9页
文件大小: 0K
描述: IC SWITCH DUAL SPDT 10UQFN
标准包装: 3,000
功能: 开关
电路: 2 x SPDT
电压电源: 单电源
电压 - 电源,单路/双路(±): 1.65 V ~ 4.5 V
电流 - 电源: 1µA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-UFQFN
供应商设备封装: 10-UQFN(1.4x1.8)
包装: 带卷 (TR)
其它名称: NLAS52231MUR2G-ND
NLAS52231MUR2GOSTR
NLAS52231
http://onsemi.com
3
NLAS52231 DC CHARACTERISTICS DIGITAL SECTION (Voltages Referenced to GND)
Symbol
Parameter
Condition
VCC
Guaranteed Limit
Unit
25°C
40
°C to +85°C
VIH
Minimum HighLevel Input Voltage, Select
Inputs
3.0
4.3
1.3
1.6
1.3
1.6
V
VIL
Maximum LowLevel Input Voltage, Select
Inputs
3.0
4.3
0.5
0.6
0.5
0.6
V
IIN
Maximum Input Leakage Current, Select
Inputs
VIN = 4.5 V or GND
4.3
±0.1
±1.0
mA
IOFF
Power Off Leakage Current
VIN = 4.5 V or GND
0
±0.5
±2.0
mA
ICC
Maximum Quiescent Supply Current
(Note 2)
Select and VIS = VCC or GND
1.65 to 4.5
±1.0
±2.0
mA
2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
NLAS52231 DC ELECTRICAL CHARACTERISTICS ANALOG SECTION
Symbol
Parameter
Condition
VCC
Guaranteed Maximum Limit
Unit
25°C
40°C to +85°C
Min
Max
Min
Max
RON (NC)
NC “ON” Resistance (Note 3)
VIN v VIL
VIS = GND to VCC
IINI v 100 mA
3.0
4.3
0.46
0.43
0.56
0.53
W
RON (NO)
NO “ON” Resistance (Note 3)
VIN w VIH
VIS = GND to VCC
IINI v 100 mA
3.0
4.3
0.38
0.35
0.48
0.43
W
RFLAT (NC)
NC_OnResistance Flatness (Notes 3, 4)
ICOM = 100 mA
VIS = 0 to VCC
3.0
4.3
0.15
0.17
0.18
W
RFLAT (NO)
NO_OnResistance Flatness (Notes 3, 4)
ICOM = 100 mA
VIS = 0 to VCC
3.0
4.3
0.12
0.14
0.16
W
DRON
OnResistance Match Between Channels
(Notes 3 and 5)
VIS = 1.5 V;
ICOM = 100 mA
VIS = 2.2 V;
ICOM = 100 mA
3.0
4.3
0.05
W
INC(OFF)
INO(OFF)
NC or NO Off Leakage Current (Note 3)
VIN = VIL or VIH
VNO or VNC = 0.3 V
VCOM = 4.0 V
4.3
10
100
nA
ICOM(ON)
COM ON
Leakage Current
(Note 3)
VIN = VIL or VIH
VNO 0.3 V or 4.0 V with
VNC floating or
VNC 0.3 V or 4.0 V with
VNO floating
VCOM = 0.3 V or 4.0 V
4.3
10
100
nA
3. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
4. Flatness is defined as the difference between the maximum and minimum value of Onresistance as measured over the specified analog
signal ranges.
5. DRON = RON(MAX) RON(MIN) between NC1 and NC2 or between NO1 and NO2.
相关PDF资料
PDF描述
NLAS5223BLMNR2G IC SWITCH DUAL SPDT 10WQFN
NLAS5223LMNR2G IC SWITCH DUAL SPDT 10WQFN
NLAS6233MUTBG IC SWITCH DUAL DPDT 16UQFN
NLAS6234MUTBG IC SWITCH DUAL DPDT 16UQFN
NLAS7213MUTAG IC USB SWITCH DPST 8UQFN
相关代理商/技术参数
参数描述
NLAS5223B 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ultra−Low 0.5 ohm Dual SPDT Analog Switch
NLAS5223B_11 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ultra-Low 0.35 Dual SPDT Analog Switch
NLAS5223BL 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ultra-Low 0.35 Dual SPDT Analog Switch
NLAS5223BLMNR2G 功能描述:模拟开关 IC DUAL SPDT ULTRA-LOW RON S RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻(最大值):0.1 Ohms 切换电压(最大): 开启时间(最大值): 关闭时间(最大值): 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16
NLAS5223BMNR2G 功能描述:模拟开关 IC DUAL SPDT ULTRA-LOW RON S RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻(最大值):0.1 Ohms 切换电压(最大): 开启时间(最大值): 关闭时间(最大值): 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16