参数资料
型号: NLU1G04MUTCG
厂商: ON Semiconductor
文件页数: 4/10页
文件大小: 0K
描述: IC INVERTER SGL HS CMOS 6-UDFN
标准包装: 3,000
逻辑类型: 逆变器,缓冲器
电路数: 1
输入数: 1
电源电压: 1.65 V ~ 5.5 V
电流 - 静态(最大值): 1µA
输出电流高,低: 8mA,8mA
额定电压和最大 CL 时的最大传播延迟: 7.5ns @ 4.5V ~ 5.5V,50pF
工作温度: -55°C ~ 125°C
安装类型: 表面贴装
供应商设备封装: 6-UDFN(1.2x1)
封装/外壳: 6-UFDFN
包装: 带卷 (TR)
NLU1G04
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
VCC
(V)
TA = 25 5C
TA = +855C
TA = 555C to
+1255C
Unit
Min
Typ
Max
Min
Max
Min
Max
VIH
LowLevel
Input Voltage
1.65
0.75 x
VCC
0.75 x
VCC
V
2.3 to
5.5
0.70 x
VCC
0.70 x
VCC
VIL
LowLevel
Input Voltage
1.65
0.25 x
VCC
0.25 x
VCC
0.25 x
VCC
V
2.3 to
5.5
0.30 x
VCC
0.30 x
VCC
0.30 x
VCC
VOH
HighLevel
Output Voltage
VIN = VIH or VIL
IOH = 50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
VIN = VIH or VIL
IOH = 4 mA
IOH = 8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
VOL
LowLevel
Output Voltage
VIN = VIH or VIL
IOL = 50 mA
2.0
3.0
4.5
0
0.1
V
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.44
0.52
IIN
Input Leakage
Current
0 v VIN v 5.5 V
0 to
5.5
±0.1
±1.0
mA
ICC
Quiescent
Supply Current
VIN = 5.5 V or
GND
5.5
1.0
10
40
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS)
Symbol
Parameter
VCC
(V)
Test
Condition
TA = 25 5C
TA = +855C
TA = 555C to
+1255C
Unit
Min
Typ
Max
Min
Max
Min
Max
tPLH,
tPHL
Propagation Delay,
Input A to Output Y
3.0 to
3.6
CL = 15 pF
4.5
7.1
8.5
10.0
ns
CL = 50 pF
6.4
10.6
12.0
14.5
4.5 to
5.5
CL = 15 pF
3.5
5.5
6.5
8.0
CL = 50 pF
4.5
7.5
8.5
10.0
CIN
Input Capacitance
4
10
10.0
pF
CPD
Power Dissipation
Capacitance
(Note 6)
5.0
8.0
pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the noload
dynamic power consumption: PD = CPD VCC2 fin + ICC VCC.
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