参数资料
| 型号： | NMF3010FCT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/10页 |
| 文件大小： | 0K |
| 描述： | IC LINE FILTER SIGNAL 6FLIPCHIP |
| 标准包装： | 3,000 |
| 滤波器类型： | 低通 |
| 滤波器数： | 2 |
| 电源电压： | 0 V ~ 10 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WFBGA，FCBGA |
| 供应商设备封装： | 6-覆晶（1.5x1） |
| 包装： | 带卷 (TR) |
| 其它名称： | NMF3010FCT1GOSTR |
NMF3000, NMF3010
http://onsemi.com
5
MAXIMUM RATINGS
Rating
Symbol
Value
Units
Operating Ambient Temperature Range
TA
40 to 85
°C
Moisture Sensitivity
MSL
Level 1
Storage Temperature Range
Tstg
55 to 150
°C
Supply Voltage
VCC
0 to 11
V
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (VCC = 0 V to 10 V, TA = 40°C to 85°C, All Typical Values Measured at 25°C)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
Supply Voltage
First stage only
VCC
0
10
V
Attenuation
@ 800 MHz, 50
W Environment
52
95
dB
Attenuation
@ 1.9 GHz, 50
W Environment
52
70
dB
B2B Diode Breakdown Voltage
IR = 1.0 mA, Pin to PGND, AGND to PGND
B2B BV
± 12
V
Standoff Voltage
VRM
10
V
Leakage Current
V = VRM, for each stage
IRM
500
nA
Power Dissipation
100
mW
NMF3000FCT1G DC Series
Resistance
Input to output on first stage
RI/O
997
1050
1103
W
NMF3010FCT1G DC Series
Resistance
Input to output on second stage
RI/O
950
1000
1050
W
Input Capacitance per Line
f = 1.0 MHz, for each stage when capacitor
has 2.0 V across its terminals.
CLINE
900
1000
1100
pF
Bias Resistance per Line
First Stage Only
RBIAS1
950
1000
1050
W
Crosstalk
50
W Source and Load
CT
25
dB
Noise
Idlechannel or Selfnoise of the Network
6.0
nV/
√Hz
Distortion
Anywhere in the Bandwidth 20 Hz to 20 kHz
0.01
%
1. Specifications apply to devices as a pair, as shown in the system diagram, unless otherwise noted as ‘for each stage’.
ESD CHARACTERISTICS
Pin
Level
Type
Min
Units
NMF3000FCT1G: A2, C2, A3, C3 to PGND
NMF3010FCT1G: B2, B3, A3 to PGND
4+
IEC 6100042
Contact
15
kV
NMF3000FCT1G: A2, C2, A3, C3 to PGND
NMF3010FCT1G: B2, B3, A3 to PGND
4
IEC 6100042
Air
15
kV
NMF3000FCT1G: All Pins Pairwise
NMF3010FCT1G: All Pins Pairwise
1
IEC 6100042
Contact
2.0
kV
NMF3000FCT1G: All Pins Pairwise
NMF3010FCT1G: All Pins Pairwise
1
IEC 6100042
Air
2.0
kV
COMPONENT MATCHING
Component
Description
Max
Unit
Resistors
Amount of Relative Variation between Symmetrical Resistors / Capaci-
tors on the same Device
2.0
%
Capacitors
tors on the same Device
2.0
%
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