参数资料
型号: NP0720SCT3G
厂商: ON SEMICONDUCTOR
元件分类: 浪涌电流限制器
英文描述: Thyristor Surge Protectors High Voltage Bidirectional
中文描述: 88 V, SILICON SURGE PROTECTOR, DO-214AA
封装: ROHS COMPLIANT, CASE 403C-01, SMB, 2 PIN
文件页数: 2/5页
文件大小: 59K
代理商: NP0720SCT3G
NP Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristics
(Note 1)
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both Polarities)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
V
(BO)
77
88
98
130
160
180
220
240
260
300
350
400
V
OffState Voltage (Both Polarities)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
V
DRM
58
65
75
90
120
140
170
180
190
220
275
320
V
Off State Current
( V
D1
= 50 V ) Both Polarities
( V
D2
= V
DRM
) Both Polarities
I
DRM1
I
DRM2
2.0
5.0
A
A
Holding Current (Both Polarities) (Note 4) V
S
= 500 V; I
T
= 2.2 A
I
H
150
250
mA
OnState Voltage I
T
= 1.0 A(pk) (PW = 300 Sec, DC = 2%)
V
T
4.0
V
Maximum NonRepetitive Rate of Change of OnState Current (Note 1)
(Haefely test method, 1.0 pk < 100 A)
di/dt
500
A/ Sec
Critical Rate of Rise of OffState Voltage
(Linear Waveform, V
D
= 0.8 V
DRM
, T
J
= 25
°
C)
dv/dt
5.0
kV/ Sec
CAPACITANCE
Characteristics
Symbol
Typ
Unit
A
B
C
(f=1.0 MHz, 1.0 V
rms
, 2 Vdc bias)
NP0640SxT3G
NP0720SxT3G
NP0900SxT3G
NP1100SxT3G
NP1300SxT3G
NP1500SxT3G
NP1800SxT3G
NP2100SxT3G
NP2300SxT3G
NP2600SxT3G
NP3100SxT3G
NP3500SxT3G
C
o
70
70
70
70
60
60
60
60
40
40
40
40
125
125
125
125
100
100
100
100
60
60
60
60
210
210
210
210
180
180
180
180
100
100
100
100
pF
1. Electrical parameters are based on pulsed test methods.
2. di/dt must not be exceeded of a maximum of 100 A/ Sec in this application.
3. Measured under pulsed conditions to reduce heating
4. Allow cooling before testing second polarity.
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